L-Shaped Double Gate Bipolar Impact Ionization MOSFET Based Energy Efficient Leaky Integrate and Fire Neuron for Spiking Neural Network

被引：1

作者：

Sarkhel, Saheli ^{[1
]}

Kumari, Tripty ^{[2
]}

Saha, Priyanka ^{[3
]}

机构：

[1] NSEC, Dept Elect & Commun Engn, Kolkata 700152, India

[2] IIT Patna, Dept Elect Engn, Patna 801103, Bihar, India

[3] CV Raman Global Univ, Dept Elect & Commun Engn, Bhubaneswar 752054, India

来源：

IEEE TRANSACTIONS ON NANOTECHNOLOGY | 2023年 / 22卷

关键词：

Neurons; BiCMOS integrated circuits; Logic gates; Impact ionization; Charge carrier processes; MOSFET; Electric potential; leaky integrate and fire; spiking neural network; L-shaped gate;

D O I：

10.1109/TNANO.2023.3322880

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this article, an L-shaped double gate bipolar impact ionization MOSFET (L-DG BIMOS) is proposed and demonstrated as an ultra-low energy artificial leaky integrate and fire (LIF) neuron for spiking neural network. The L-shaped double gate structure offers a higher rate of impact ionization (II) essential for triggering LIF action and hence can efficiently be applicable to mimic a biological neuron. Using a well-calibrated 2D TCAD tool, the functioning of the proposed device as an LIF neuron is manifested by exhibiting a low threshold voltage of 0.2 V to fire a spike, reduced breakdown voltage of 0.68 V and 0.1050 pJ of energy per spike, making the device more energy efficient as compared to conventional neurons. In addition, the spiking frequency of L-DG BIMOS is calculated to be in the gigahertz (Gz) range when the drain is biased at 1.5 V, which is much higher than biological neurons.

引用

页码：673 / 678

页数：6

共 15 条

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