Design of Leaky Integrate and Fire Neuron for Spiking Neural Networks Using Trench Bipolar I-MOS

In this article, using calibrated 2-D TCAD simulations we report a trench Bipolar I-MOS for the realization of a spiking neural network. We demonstrated that the proposed trench Bipolar I-MOS LIF neuron can emulate the biological neuronal nature and exhibits a low threshold voltage (-0.16 V), which is similar to|400 mV| lower than the past reported LBIMOS LIF neuron. Moreover, the trench Bipolar I-MOS neuron consumes 0.35 pJ energy per spike, which is similar to 100x lower in comparison to the PDSOI LIF neuron. Further, the proposed LIF neuron shows similar to 10x reduction in energy per spike than the recently published Ge MOSFET and JLFET based LIF neurons. In addition, the proposed trench Bipolar I-MOS LIF neuron exhibits similar to 6 orders high spiking frequency than the bio-logical neuron. Also, the proposed device shows a similar to 1.1x reduction in the breakdown voltage as compared to the conventional Bipolar I-MOS. This is due to the crowding of the electric field near the gate edges.