Effect of sulfide-polyamide passivation on dark currents of the InAlAs/InGaAs/InP avalanche photodiodes

被引：0
|
作者：
Andryushkin, V. V. [1 ]
Maleev, N. A. [2 ]
Kuzmenkov, A. G. [2 ]
Kulagina, M. M. [2 ]
Guseva, Yu. A. [2 ]
Vasil'ev, A. P. [3 ]
Blokhin, S. A. [2 ]
Bobrov, M. A. [2 ]
Troshkov, S. I. [2 ]
Papylev, D. S. [1 ]
Kolodeznyi, E. S. [1 ]
Ustinov, V. M. [3 ]
机构：
[1] ITMO Univ, St Petersburg, Russia
[2] Ioffe Inst, St Petersburg, Russia
[3] RAS, Submicron Heterostruct Microelect Res & Engn Ctr, St Petersburg, Russia
来源：
ST PETERSBURG POLYTECHNIC UNIVERSITY JOURNAL-PHYSICS AND MATHEMATICS | 2023年 / 16卷 / 03期
关键词：
sulfide-polyamide passivation; avalanche photodiode; mesa structure;
D O I：
10.18721/JPM.163.164
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The paper presents a study of effect the mesa structure surface passivation on performance of InAlAs/InGaAs/InP avalanche photodiodes. The mesa passivation was made by using treatment in an aqueous solution of ammonium sulfide and subsequent protection by a layer of polyamide (sulfide-polyamide passivation). As a result, avalanche photodiodes with a photosensitive area of 32 microns reproducibly demonstrate dark current below 10-20 nA at the level of 0.9 of the breakdown voltage. A homogeneous distribution of the breakdown voltage value over the sample area at -85V, as well as long-term stability of avalanche photodiode characteristics were observed.
引用
收藏
页码：352 / 356
页数：5
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