Effect of sulfide-polyamide passivation on dark currents of the InAlAs/InGaAs/InP avalanche photodiodes

被引：0

作者：

Andryushkin, V. V. ^{[1
]}

Maleev, N. A. ^{[2
]}

Kuzmenkov, A. G. ^{[2
]}

Kulagina, M. M. ^{[2
]}

Guseva, Yu. A. ^{[2
]}

Vasil'ev, A. P. ^{[3
]}

Blokhin, S. A. ^{[2
]}

Bobrov, M. A. ^{[2
]}

Troshkov, S. I. ^{[2
]}

Papylev, D. S. ^{[1
]}

Kolodeznyi, E. S. ^{[1
]}

Ustinov, V. M. ^{[3
]}

机构：

[1] ITMO Univ, St Petersburg, Russia

[2] Ioffe Inst, St Petersburg, Russia

[3] RAS, Submicron Heterostruct Microelect Res & Engn Ctr, St Petersburg, Russia

来源：

ST PETERSBURG POLYTECHNIC UNIVERSITY JOURNAL-PHYSICS AND MATHEMATICS | 2023年 / 16卷 / 03期

关键词：

sulfide-polyamide passivation; avalanche photodiode; mesa structure;

D O I：

10.18721/JPM.163.164

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The paper presents a study of effect the mesa structure surface passivation on performance of InAlAs/InGaAs/InP avalanche photodiodes. The mesa passivation was made by using treatment in an aqueous solution of ammonium sulfide and subsequent protection by a layer of polyamide (sulfide-polyamide passivation). As a result, avalanche photodiodes with a photosensitive area of 32 microns reproducibly demonstrate dark current below 10-20 nA at the level of 0.9 of the breakdown voltage. A homogeneous distribution of the breakdown voltage value over the sample area at -85V, as well as long-term stability of avalanche photodiode characteristics were observed.

引用

页码：352 / 356

页数：5

共 50 条

[21] PASSIVATION OF PLANAR INP/INGAAS AVALANCHE PHOTODIODES BY PECVD SILICON-NITRIDE DEPOSITION
PEYRE, JL
RIPOCHE, G
BLANJOT, C
VIDE-SCIENCE TECHNIQUE ET APPLICATIONS, 1990, 45 (251): : 80 - 81
[22] Material Defects and Dark Currents in InGaAs/InP Avalanche Photodiode Devices
Guo, Zilu
Wang, Wenjuan
Li, Yangjun
Qu, Huidan
Fan, Liuyan
Chen, Xiren
Zhu, Yicheng
Gu, Yue
Wang, Yajie
Zheng, Changlin
Chen, Pingping
Lu, Wei
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2022, 69 (09) : 4944 - 4949
[23] INP/INGAASP/INGAAS PLANAR AVALANCHE PHOTODIODES
MIKAWA, T
KANEDA, T
NAKAJIMA, K
JAPAN ANNUAL REVIEWS IN ELECTRONICS COMPUTERS & TELECOMMUNICATIONS, 1984, 11 : 68 - 83
[24] Epitaxial structures for InGaAs/InP avalanche photodiodes
A. K. Budtolaev
P. E. Khakuashev
I. V. Chinareva
P. V. Gorlachuk
M. A. Ladugin
A. A. Marmaluk
Yu. L. Ryaboshtan
I. V. Yarotskaya
Journal of Communications Technology and Electronics, 2017, 62 : 304 - 308
[25] Epitaxial Structures for InGaAs/InP Avalanche Photodiodes
Budtolaev, A. K.
Khakuashev, P. E.
Chinareva, I. V.
Gorlachuk, P. V.
Ladugin, M. A.
Marmaluk, A. A.
Ryaboshtan, Yu. L.
Yarotskaya, I. V.
JOURNAL OF COMMUNICATIONS TECHNOLOGY AND ELECTRONICS, 2017, 62 (03) : 304 - 308
[26] Detection efficiencies for InP, InAlAs, and InAlAs-InP single-photon avalanche photodiodes
Ramirez, DA
Hayat, MM
Karve, G
Campbell, JC
Torres, SN
Saleh, BEA
Teich, MC
2005 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS (LEOS), 2005, : 370 - 371
[27] Advanced InGaAs/InAlAs/InP avalanche photodiodes for high speed detection of 1.55 μm infrared radiation
Kaniewski, J.
Muszalski, J.
Piotrowski, J.
INFRARED SPACEBORNE REMOTE SENSING AND INSTRUMENTATION XVI, 2008, 7082
[28] Cadmium sulfide passivation of InGaAs/InP mesa p-i-n photodiodes
W. A. Teynor
K. Vaccaro
W. R. Buchwald
H. M. Dauplaise
C. P. Morath
A. Davis
M. A. Roland
W. R. Clark
Journal of Electronic Materials, 2005, 34 : 1368 - 1372
[29] Mushroom Mesa Structure for InAlAs-InGaAs Avalanche Photodiodes
Maleev, N. A.
Kuzmenkov, A. G.
Kulagina, M. M.
Vasyl'ev, A. P.
Blokhin, S. A.
Troshkov, S. I.
Nashchekin, A. V.
Bobrov, M. A.
Blokhin, A. A.
Voropaev, K. O.
Bugrov, V. E.
Ustinov, V. M.
TECHNICAL PHYSICS LETTERS, 2023, 49 (SUPPL 3) : S215 - S218
[30] Cadmium sulfide passivation of InGaAs/InP mesa p-i-n photodiodes
Teynor, WA
Vaccaro, K
Buchwald, WR
Dauplaise, HM
Morath, CP
Davis, A
Roland, MA
Clark, WR
JOURNAL OF ELECTRONIC MATERIALS, 2005, 34 (11) : 1368 - 1372

← 1 2 3 4 5 →