Optical anisotropy and polarization selectivity in MoS2/Ta2NiSe5 van der Waals heterostructures

被引:11
|
作者
Wang, Wenjia [1 ]
Sun, Yurun [2 ]
Dai, Pan [3 ]
Gao, Honglei [1 ]
Du, Changhui [1 ]
Li, Kuilong [1 ]
机构
[1] Qilu Univ Technol, Shandong Acad Sci, Int Sch Optoelect Engn, Jinan 250353, Peoples R China
[2] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Key Lab Nano Devices & Applicat, Suzhou 215123, Peoples R China
[3] Huzhou Univ, Sch Informat Engn, Huzhou 313000, Peoples R China
关键词
TERNARY TA2NISE5; MONOLAYER; MODULATION; STRAIN;
D O I
10.1063/5.0146303
中图分类号
O59 [应用物理学];
学科分类号
摘要
In-plane anisotropy induced by a low-symmetric lattice structure in two-dimensional (2D) van der Waals (vdWs) materials has significantly promoted their applications in optoelectronic devices, especially in polarization photodetection. Given the mature preparation technology of transition metal dichalcogenides (TMDCs), introducing artificial anisotropy into symmetric TMDCs becomes a promising way to trigger more excellent functionalities beyond their intrinsic properties. Herein, monolayer MoS2 in the MoS2/Ta2NiSe5 vdWs heterostructure presents obvious anisotropic optical properties confirmed by polarized Raman and photoluminescence spectra, which is mainly ascribed to the uniaxial strain via strong interlayer couplings. Moreover, the MoS2/Ta2NiSe5 heterojunction endows unique orientation-selected polarized absorbance. In the visible region, the dominant polarized orientation is along the armchair axis while rotated to the perpendicular direction in the near-infrared spectrum, which is mainly ascribed to the intrinsic linear dichroism of Ta2NiSe5. The results suggest that the MoS2/Ta2NiSe5 heterostructure provides a promising platform for artificial regulation of the optoelectronic properties of symmetric MoS2 and integrated optical applications in the polarization-sensitive photodetection.
引用
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页数:7
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