Optical anisotropy and polarization selectivity in MoS2/Ta2NiSe5 van der Waals heterostructures

被引:11
|
作者
Wang, Wenjia [1 ]
Sun, Yurun [2 ]
Dai, Pan [3 ]
Gao, Honglei [1 ]
Du, Changhui [1 ]
Li, Kuilong [1 ]
机构
[1] Qilu Univ Technol, Shandong Acad Sci, Int Sch Optoelect Engn, Jinan 250353, Peoples R China
[2] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Key Lab Nano Devices & Applicat, Suzhou 215123, Peoples R China
[3] Huzhou Univ, Sch Informat Engn, Huzhou 313000, Peoples R China
关键词
TERNARY TA2NISE5; MONOLAYER; MODULATION; STRAIN;
D O I
10.1063/5.0146303
中图分类号
O59 [应用物理学];
学科分类号
摘要
In-plane anisotropy induced by a low-symmetric lattice structure in two-dimensional (2D) van der Waals (vdWs) materials has significantly promoted their applications in optoelectronic devices, especially in polarization photodetection. Given the mature preparation technology of transition metal dichalcogenides (TMDCs), introducing artificial anisotropy into symmetric TMDCs becomes a promising way to trigger more excellent functionalities beyond their intrinsic properties. Herein, monolayer MoS2 in the MoS2/Ta2NiSe5 vdWs heterostructure presents obvious anisotropic optical properties confirmed by polarized Raman and photoluminescence spectra, which is mainly ascribed to the uniaxial strain via strong interlayer couplings. Moreover, the MoS2/Ta2NiSe5 heterojunction endows unique orientation-selected polarized absorbance. In the visible region, the dominant polarized orientation is along the armchair axis while rotated to the perpendicular direction in the near-infrared spectrum, which is mainly ascribed to the intrinsic linear dichroism of Ta2NiSe5. The results suggest that the MoS2/Ta2NiSe5 heterostructure provides a promising platform for artificial regulation of the optoelectronic properties of symmetric MoS2 and integrated optical applications in the polarization-sensitive photodetection.
引用
收藏
页数:7
相关论文
共 50 条
  • [21] Reconfigurable Phototransistors Driven by Gate-Dependent Carrier Modulation in WSe2/Ta2NiSe5 van der Waals Heterojunctions
    Guo, Tingting
    Pan, Zhidong
    Li, Jing
    Sa, Zixu
    Wang, Xusheng
    Shen, Yehui
    Yang, Jialin
    Chen, Chuyao
    Zhao, Tong
    Li, Zhi
    Chen, Xiang
    Yang, Zai-xing
    Zhu, Gangyi
    Huo, Nengjie
    Song, Xiufeng
    Zhang, Shengli
    Zeng, Haibo
    ACS NANO, 2024, 19 (01) : 1302 - 1315
  • [22] Photoemission Spectroscopy of Ta2NiSe5
    Wakisaka, Y.
    Sudayama, T.
    Takubo, K.
    Mizokawa, T.
    Saini, N. L.
    Arita, M.
    Namatame, H.
    Taniguchi, M.
    Katayama, N.
    Nohara, M.
    Takagi, H.
    JOURNAL OF SUPERCONDUCTIVITY AND NOVEL MAGNETISM, 2012, 25 (05) : 1231 - 1234
  • [23] Interfacial Thermal Conductance across Graphene/MoS2 van der Waals Heterostructures
    Wu, Shuang
    Wang, Jifen
    Xie, Huaqing
    Guo, Zhixiong
    ENERGIES, 2020, 13 (21)
  • [24] High-Temperature Superlubricity in MoS2/Graphene van der Waals Heterostructures
    Long, Yuyang
    Wang, Xiao
    Tan, Wang
    Li, Baowen
    Li, Jidong
    Deng, Wei
    Li, Xuemei
    Guo, Wanlin
    Yin, Jun
    NANO LETTERS, 2024, 24 (25) : 7572 - 7577
  • [25] Effect of misfit strain on the buckling of graphene/MoS2 van der Waals heterostructures
    Zhang, Run-Sen
    Jiang, Jin-Wu
    NANOTECHNOLOGY, 2021, 32 (48)
  • [26] Electronic properties and photoactivity of monolayer MoS2/fullerene van der Waals heterostructures
    Luo, Cai-Yun
    Huang, Wei-Qing
    Xu, Liang
    Yang, Yin-Cai
    Li, Xiaofan
    Hu, Wangyu
    Peng, P.
    Huang, Gui-Fang
    RSC ADVANCES, 2016, 6 (49) : 43228 - 43236
  • [27] Photoemission Spectroscopy of Ta2NiSe5
    Y. Wakisaka
    T. Sudayama
    K. Takubo
    T. Mizokawa
    N. L. Saini
    M. Arita
    H. Namatame
    M. Taniguchi
    N. Katayama
    M. Nohara
    H. Takagi
    Journal of Superconductivity and Novel Magnetism, 2012, 25 : 1231 - 1234
  • [28] Band alignments tuned by spontaneous polarization in two-dimensional MoS2/GaN van der Waals heterostructures
    Wang, Boyu
    Ning, Jing
    Zhang, Jincheng
    Wang, Dong
    Hao, Yue
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2022, 143
  • [29] Probing negatively charged and neutral excitons in MoS2/hBN and hBN/MoS2/hBN van der Waals heterostructures
    Jadczak, J.
    Kutrowska-Girzycka, J.
    Bieniek, M.
    Kazimierczuk, T.
    Kossacki, P.
    Schindler, J. J.
    Debus, J.
    Watanabe, K.
    Taniguchi, T.
    Ho, C. H.
    Wojs, A.
    Hawrylak, P.
    Bryja, L.
    NANOTECHNOLOGY, 2021, 32 (14)
  • [30] Controlling Carrier Transport in Vertical MoTe2/MoS2 van der Waals Heterostructures
    Pan, Yuchuan
    Liu, Xiaochi
    Yang, Junqiang
    Yoo, Won Jong
    Sun, Jian
    ACS APPLIED MATERIALS & INTERFACES, 2021, 13 (45) : 54294 - 54300