Leaky FinFET for Reservoir Computing with Temporal Signal Processing

被引:7
|
作者
Han, Joon-Kyu [1 ]
Yun, Seong-Yun [1 ]
Yu, Ji-Man [1 ]
Choi, Yang-Kyu [1 ]
机构
[1] Korea Adv Inst Sci & Technol KAIST, Sch Elect Engn, Daejeon 34141, South Korea
基金
新加坡国家研究基金会;
关键词
charge trap; leaky fin-shaped field-effect transistor(L-FinFET); reservoir computing; short-term memory; temporal signal processing;
D O I
10.1021/acsami.3c02630
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Reservoir computing can greatly reduce the hardware andtrainingcosts of recurrent neural networks with temporal data processing.To implement reservoir computing in a hardware form, physical reservoirstransforming sequential inputs into a high-dimensional feature spaceare necessary. In this work, a physical reservoir with a leaky fin-shapedfield-effect transistor (L-FinFET) is demonstrated by the positiveuse of a short-term memory property arising from the absence of anenergy barrier to suppress the tunneling current. Nevertheless, theL-FinFET reservoir does not lose its multiple memory states. The L-FinFETreservoir consumes very low power when encoding temporal inputs becausethe gate serves as an enabler of the write operation, even in theoff-state, due to its physical insulation from the channel. In addition,the small footprint area arising from the scalability of the FinFETdue to its multiple-gate structure is advantageous for reducing thechip size. After the experimental proof of 4-bit reservoir operationswith 16 states for temporal signal processing, handwritten digitsin the Modified National Institute of Standards and Technology datasetare classified by reservoir computing.
引用
收藏
页码:26960 / 26966
页数:7
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