CMOS Compatible Low Power Consumption Ferroelectric Synapse for Neuromorphic Computing

被引：11

作者：

Li, Zhenhai ^{[1
,2
,3
]}

Meng, Jialin ^{[1
,2
,3
]}

Yu, Jiajie ^{[1
,2
,3
]}

Liu, Yongkai ^{[1
,2
,3
]}

Wang, Tianyu ^{[1
,2
,3
]}

Liu, Pei ^{[1
,2
,3
]}

Chen, Shiyou ^{[1
,2
,3
]}

Zhu, Hao ^{[1
,2
,3
]}

Sun, Qingqing ^{[1
,2
,3
]}

Zhang, David Wei ^{[1
,2
,3
]}

Chen, Lin ^{[1
,2
,3
]}

机构：

[1] Fudan Univ, Sch Microelect, Shanghai 200433, Peoples R China

[2] Zhangjiang Fudan Int Innovat Ctr, Shanghai 201203, Peoples R China

[3] Jiashan Fudan Inst, Jiaxing 314100, Zhejiang, Peoples R China

来源：

IEEE ELECTRON DEVICE LETTERS | 2023年 / 44卷 / 03期

基金：

中国博士后科学基金;

关键词：

HfO2-based FTJ; first-principles calculations; synaptic devices; neuromorphic computing; MEMRISTOR;

D O I：

10.1109/LED.2023.3234690

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

With the development of bioelectronics, brain-inspired artificial synapses become more and more important. To simulate artificial synapse, a HfAlO ferroelectric tunnel junction (FTJ) was fabricated, which can simulate short-term synaptic plasticity for neuromorphic computing. The devices realize the synaptic function with low power consumption of about 7.15 aJ per synaptic event. Moreover, to explore the effect of oxygen defects on ferroelectric properties of HfAlO-based device, the first-principle analysis was further carried out. These results pave the way of hafnium-based ferroelectric synaptic devices.

引用

页码：532 / 535

页数：4

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