Memristive and CMOS Devices for Neuromorphic Computing

被引:91
|
作者
Milo, Valerio [1 ,2 ]
Malavena, Gerardo [1 ,2 ]
Compagnoni, Christian Monzio [1 ,2 ]
Ielmini, Daniele [1 ,2 ]
机构
[1] Politecn Milan, Dipartimento Elettron Informaz & Bioingn, Piazza L da Vinci 32, I-20133 Milan, Italy
[2] Italian Univ Nanoelect Team IUNET, Piazza L da Vinci 32, I-20133 Milan, Italy
基金
欧洲研究理事会;
关键词
neuromorphic computing; Flash memories; memristive devices; resistive switching; synaptic plasticity; artificial neural network; spiking neural network; pattern recognition; RESISTIVE-SWITCHING MEMORY; PHASE-CHANGE MEMORY; DEEP NEURAL-NETWORKS; PART I; OXIDE; SPIN; SYNAPSES; MODEL; PLASTICITY; ARRAY;
D O I
10.3390/ma13010166
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Neuromorphic computing has emerged as one of the most promising paradigms to overcome the limitations of von Neumann architecture of conventional digital processors. The aim of neuromorphic computing is to faithfully reproduce the computing processes in the human brain, thus paralleling its outstanding energy efficiency and compactness. Toward this goal, however, some major challenges have to be faced. Since the brain processes information by high-density neural networks with ultra-low power consumption, novel device concepts combining high scalability, low-power operation, and advanced computing functionality must be developed. This work provides an overview of the most promising device concepts in neuromorphic computing including complementary metal-oxide semiconductor (CMOS) and memristive technologies. First, the physics and operation of CMOS-based floating-gate memory devices in artificial neural networks will be addressed. Then, several memristive concepts will be reviewed and discussed for applications in deep neural network and spiking neural network architectures. Finally, the main technology challenges and perspectives of neuromorphic computing will be discussed.
引用
收藏
页数:33
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