Electrical parameters and low-frequency noise of AlGaN/GaN high-electron mobility transistors with different channel orientation

被引：1

作者：

de Andrade, Maria Gloria Cano ^{[1
]}

Nogueira, Carlos Roberto ^{[1
]}

Graciano Junior, Nilton ^{[1
]}

Doria, Rodrigo T. ^{[2
]}

Trevisoli, Renan ^{[3
]}

Simoen, Eddy ^{[4
,5
]}

机构：

[1] Sao Paulo State Univ UNESP, Inst Sci & Technol, Ave 3 Marco 511, BR-18087180 Sorocaba, Brazil

[2] Ctr Univ FEI, Elect Engn Dept, Av Humberto Alencar Castelo Branco 3972, BR-09850901 Sao Bernardo Do Campo, Brazil

[3] Pontificia Univ Catol Sao Paulo, Sch Sci & Technol, PUC SP, Rua Marques Paranagua 111, BR-01303050 Sao Paulo, Brazil

[4] Univ Ghent, Perfus, Sint Pietersnieuwstraat 25, Ghent, Belgium

[5] imec, Kapeldreef 75, B-3001 Leuven, Belgium

来源：

SOLID-STATE ELECTRONICS | 2024年 / 211卷

基金：

巴西圣保罗研究基金会;

关键词：

GaN/AlGaN HEMT; Electrical parameters; Low-frequency noise; Channel orientations; DEEP-LEVELS;

D O I：

10.1016/j.sse.2023.108807

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The performance of AlGaN/GaN High-Electron Mobility Transistors (HEMTs) fabricated on (111) silicon substrates has been experimentally investigated, aiming to verify the effect of different channel orientations on the main electrical parameters, such as drain current (ID), threshold voltage, transconductance (gm), and DrainInduced Barrier Lowering (DIBL). Moreover, the noise Power Spectral Density (PSD) with different channel orientations has also been characterized in linear operation. No noticeable differences on the electrical and noise PSD characteristics have been observed between the GaN channel orientations (0 degrees, 90 degrees and 45 degrees).

引用

页数：5

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