Impact of Variability on Novel Transistor Configurations in Adder Circuits at 7 nm FinFET Technology

被引:4
|
作者
Mushtaq, Umayia [1 ]
Akram, Md. Waseem [1 ]
Prasad, Dinesh [1 ]
Islam, Aminul [2 ]
Nagar, Bal Chand [3 ]
机构
[1] Jamia Millia Islamia, Dept Elect & Commun Engn, New Delhi 110025, India
[2] Birla Inst Technol, Dept Elect & Commun Engn, Ranchi 835215, India
[3] Natl Inst Technol, Dept Elect & Commun Engn, Patna 800005, Bihar, India
关键词
ASAP7; PDK; FinFET; PVT; AOI; full adder; variability; DESIGN; VOLTAGE;
D O I
10.1142/S0218126624502372
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
This research work focuses on implementation of the FinFET-based complementary metal-oxide-semiconductor (CMOS) Full Adder circuits for different transistor configurations using ASAP7 FinFET model. First, this work examines FinFET-based AND-OR-invert (AOI) gates using different topologies, and second, a FinFET-based CMOS Full Adder circuit at the 7nm technology node is analyzed with respect to its process, voltage and temperature (PVT) variability effect measured in terms of the normalized standard deviation of different performance metrics. The comparison is made between conventional (CFFA1) and proposed (FFA2, FFA3, FFA4, FFA5, FFA6, FFA7 and FFA8) FinFET-based CMOS full adder circuits. The aim is to determine the optimal design configuration of the FinFET full adder circuit with the minimum impact of PVT variability. On examining the power delay product (PDP) variability, it is found that variations in FFA2, FFA3, FFA4, FFA5, FFA6, FFA7 and FFA8 are significantly lower than CFFA1 by 6.30%, 4.68%, 10.30%, 65.48%, 68.05%, 65.61% and 17.20%, respectively. Among all the proposed configurations, normalized standard deviation sigma/mu(%) for the PDP metric is lowest in FFA6, followed by FFA7, FFA5, FFA8, FFA4, FFA2 and FFA3. The normalized standard deviation sigma/mu(%) for power dissipation, however, is lowest in FFA8. In addition, a layout comparison analysis of conventional and proposed full adder circuits reveals that FFA7 has the least area, followed by FFA8, FFA6, FFA5, FFA3, FFA4, FFA2 and CFFA1. The area of FFA2, FFA3, FFA4, FFA5 and FFA6 has decreased by 3.29%, 3.51%, 3.50%, 5.14% and 5.52%, while FFA7 and FFA8 have experienced a decrease in area by 13.87% and 14.36%, respectively, as compared to conventional CFFA1. The proposed layout of FinFET-based CMOS Full Adders can be directly transferred into the foundry's production line for manufacturing purposes. The overall investigation led us to conclude that FFA8 is the most efficient of all due to the lowest power variation, lower delay variation and lower PDP variation, moreover it has a reduced layout area among all the discussed designs. However, there is a tradeoff in terms of penalty in nominal power, propagation delay and PDP in the proposed topologies.
引用
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页数:20
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