Insights on CaTiS3 films grown by pulsed laser deposition

被引：2

作者：

Fix, T. ^{[1
,2
]}

Raissi, S. ^{[1
,2
]}

Muller, D. ^{[1
,2
]}

Bouillet, C. ^{[3
,4
]}

Preziosi, D. ^{[3
,4
]}

Slaoui, A. ^{[1
,2
]}

机构：

[1] CNRS, ICube Lab, 23 rue Loess, F-67037 Strasbourg, France

[2] Univ Strasbourg, 23 rue Loess, F-67037 Strasbourg, France

[3] CNRS, Inst Phys & Chim Mat Strasbourg IPCMS, UMR 7504, 23 rue Loess,BP 43, F-67034 Strasbourg 2, France

[4] Univ Strasbourg, 23 rue Loess,BP 43, F-67034 Strasbourg 2, France

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2023年 / 964卷

关键词：

Thin films; Sulphide materials; CHALCOGENIDE PEROVSKITES;

D O I：

10.1016/j.jallcom.2023.171272

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We attempt to grow perovskite CaTiS3 by pulsed laser deposition (PLD) on various substrates using a CaS:TiS2 target. Using Al2O3 (0001) substrates at 600 degrees C deposition temperature in vacuum, Ca1.0Ti1.05S2.48Oy stoichiometry is measured by Energy-dispersive X-ray spectroscopy (EDS) and Ca1.0Ti1.0S2.0O0.7 by Rutherford Backscattering Spectrometry (RBS). This indicates that when the films are grown in vacuum at moderate temperature, a high amount of S can be transferred from the target to the film. While no phase segregation of CaS and TiS2 could be observed, no perovskite CaTiS3 phase could be obtained, but rather a phase governed by van der Waals interactions. The films show a highly doped n-type semiconductor behavior with absorption coefficient in the 105 cm-1 range at 350-2500 nm but no surface photovoltage signal. This work should stimulate further experimental efforts in PLD growth of chalcogenides and chalcogenide perovskites.

引用

页数：5

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