Stoichiometry of LaAlO3 films grown on SrTiO3 by pulsed laser deposition

被引:23
|
作者
Golalikhani, M. [1 ]
Lei, Q. Y. [1 ]
Chen, G. [2 ]
Spanier, J. E. [2 ]
Ghassemi, H. [2 ]
Johnson, C. L. [2 ]
Taheri, M. L. [2 ]
Xi, X. X. [1 ]
机构
[1] Temple Univ, Dept Phys, Philadelphia, PA 19122 USA
[2] Drexel Univ, Dept Mat Sci & Engn, Philadelphia, PA 19104 USA
基金
美国国家科学基金会;
关键词
OXIDE HETEROSTRUCTURES; INTERFACES; DISPLACEMENT;
D O I
10.1063/1.4811821
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have studied the stoichiometry of epitaxial LaAlO3 thin films on SrTiO3 substrate grown by pulsed laser deposition as a function of laser energy density and oxygen pressure during the film growth. Both x-ray diffraction (theta-2 theta scan and reciprocal space mapping) and transmission electron microscopy (geometric phase analysis) revealed a change of lattice constant in the film with the distance from the substrate. Combined with composition analysis using x-ray fluorescence we found that the nominal unit-cell volume expanded when the LaAlO3 film was La-rich, but remained near the bulk value when the film was La-poor or stoichiometric. La excess was found in all the films deposited in oxygen pressures lower than 10(-2) Torr. We conclude that the discussion of LaAlO3/SrTiO3 interfacial properties should include the effects of cation off-stoichiometry in the LaAlO3 films when the deposition is conducted under low oxygen pressures. (C) 2013 AIP Publishing LLC.
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页数:5
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