Nonmonotonic anomalous Hall effect and anisotropic magnetoresistance in SrRuO3/PbZr0.52Ti0.48O3 heterostructures

被引：0
|
作者：
Wang, Zhen-Li [1 ]
Kang, Chao-Yang [1 ]
Jia, Cai-Hong [1 ]
Guo, Hai-Zhong [2 ]
Zhang, Wei-Feng [1 ]
机构：
[1] Henan Univ, Ctr Topol Funct Mat, Kaifeng 475004, Peoples R China
[2] Zhengzhou Univ, Sch Phys & Microelect, Key Lab Mat Phys, Minist Educ, Zhengzhou 450052, Peoples R China
来源：
CHINESE PHYSICS B | 2023年 / 32卷 / 10期
基金：
中国国家自然科学基金;
关键词：
Berry curvature; electric field; anomalous Hall effect; anisotropic magnetoresistance; magnetization rotation; 73.43.-f; 73.43.Qt; 75.60.Jk; FILMS;
D O I：
10.1088/1674-1056/accd58
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We fabricate SrRuO3/PbZr0.52Ti0.48O3 heterostructures each with an in-plane tensile-strained SrRuO3 layer and investigate the effect of an applied electric field on anomalous Hall effect. The four-fold symmetry of anisotropic magnetoresistance and the nonmonotonic variation of anomalous Hall resistivity are observed. By applying positive electric field or negative electric field, the intersecting hump-like feature is suppressed or enhanced, respectively. The sign and magnitude of the anomalous Hall conductivity can be effectively controlled with an electric field under a high magnetic field. The electric-field-modulated anomalous Hall effect is associated with the magnetization rotation in SrRuO3. The experimental results are helpful in modulating the magnetization rotation in spintronic devices based on SrRuO3 heterostructures.
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页数：8
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