Nonmonotonic anomalous Hall effect and anisotropic magnetoresistance in SrRuO3/PbZr0.52Ti0.48O3 heterostructures

被引:0
|
作者
Wang, Zhen-Li [1 ]
Kang, Chao-Yang [1 ]
Jia, Cai-Hong [1 ]
Guo, Hai-Zhong [2 ]
Zhang, Wei-Feng [1 ]
机构
[1] Henan Univ, Ctr Topol Funct Mat, Kaifeng 475004, Peoples R China
[2] Zhengzhou Univ, Sch Phys & Microelect, Key Lab Mat Phys, Minist Educ, Zhengzhou 450052, Peoples R China
基金
中国国家自然科学基金;
关键词
Berry curvature; electric field; anomalous Hall effect; anisotropic magnetoresistance; magnetization rotation; 73.43.-f; 73.43.Qt; 75.60.Jk; FILMS;
D O I
10.1088/1674-1056/accd58
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We fabricate SrRuO3/PbZr0.52Ti0.48O3 heterostructures each with an in-plane tensile-strained SrRuO3 layer and investigate the effect of an applied electric field on anomalous Hall effect. The four-fold symmetry of anisotropic magnetoresistance and the nonmonotonic variation of anomalous Hall resistivity are observed. By applying positive electric field or negative electric field, the intersecting hump-like feature is suppressed or enhanced, respectively. The sign and magnitude of the anomalous Hall conductivity can be effectively controlled with an electric field under a high magnetic field. The electric-field-modulated anomalous Hall effect is associated with the magnetization rotation in SrRuO3. The experimental results are helpful in modulating the magnetization rotation in spintronic devices based on SrRuO3 heterostructures.
引用
收藏
页数:8
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