Graphene/Al2O3/Si Schottky diode with integrated waveguide on a silicon-on-insulator wafer

Waveguide-integrated graphene photodiodes are on-chip optoelectronic devices with promising applications in telecommunications. Here, we present the electrical properties of a heterostructure consisting of multilayer graphene (MLGr) over a Si waveguide covered by an ultrathin Al2O3 layer. The waveguide is fabricated by etching a silicon-on insulator (SOI) substrate with 220 nm Si and 1.5 lm buried oxide. The 5 nm-thick Al2O3 film is deposited by atomic layer deposition (ALD), while graphene, synthesized on copper by chemical vapor deposition (CVD), is transferred onto the Al2O3/Si rib by a wet transfer method. The MLGr/ Al2O3 /Si rib forms a Schottky structure with rectifying current-voltage characteristics, which are examined using the thermionic emission theory and Norde's method. A Schottky barrier height UB = 0.79eV, an ideality factor n = 26, and a series resistance R-S = 11.6MX are obtained. The device is promising for operation at the optical fiber communication wavelength of 1550 nm.