Fabrication of the Si/Al2O3/SiO2/Si structure using O2 annealed Al2O3/Si structure

被引：10

作者：

Ishida, M ^{[1
]}

Hori, H ^{[1
]}

Kondo, F ^{[1
]}

Akai, D ^{[1
]}

Sawada, K ^{[1
]}

机构：

[1] Toyohashi Univ Technol, Dept Elect & Elect Engn, Toyohashi, Aichi 4418580, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2000年 / 39卷 / 4B期

关键词：

SOI; heteroepitaxial growth; epitaxial Al2O3; formation of SiO2; UHV-CVD; MOSFET;

D O I：

10.1143/JJAP.39.2078

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The formation of a SiO2 layer in the interface between epitaxial Al2O3(100) and a Si(100) substrate, in order to improve the insulation, was studied using O-2 annealing at 1000 degrees C, and the Al2O3(100)/SiO2/Si(100) structure was proposed as a Si-on- insulator (SOI) substrate. The breakdown voltage property of Al2O3/SiO2/Si, rather than that of the Al2O3/Si structure, was improved from 8 V to 50 V. Moreover, Si(100) growth on the Al2O3/SiO2/Si structure was carried out, and the morphology of the Si top layer was very smooth. Metal-oxide-semiconductor field effect transistors (MOSFETs) on the substrates show excellent electrical properties, which indicates the high crystallinity of SOI.

引用

页码：2078 / 2082

页数：5

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