Effect of passivation on selectively grown sub-μm Ge-on-Si single photon avalanche diode detectors

被引：2

作者：

Coughlan, C. ^{[1
]}

Mirza, M. M. ^{[1
]}

Kirdoda, J. ^{[1
]}

Dumas, D. ^{[1
]}

Smith, C. ^{[1
]}

McCarthy, C. ^{[1
]}

Millar, R. W. ^{[1
]}

Paul, D. J. ^{[1
]}

机构：

[1] Univ Glasgow, Sch Engn, Rankine Bldg,Oakfield Ave, Glasgow G12 8LT, Scotland

来源：

2023 IEEE SILICON PHOTONICS CONFERENCE, SIPHOTONICS | 2023年

基金：

英国工程与自然科学研究理事会; “创新英国”项目;

关键词：

germanium-on-silicon; single photon avalanche diode detector; passivation; selectively grown;

D O I：

10.1109/SIPHOTONICS55903.2023.10141911

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Ge-on-SOI (silicon-on-insulator) single photon avalanche diodes (SPADs) have been fabricated with exposed sidewalls allowing variation of passivation techniques. Reduced dark currents and density of surface states are demonstrated with thermal oxide passivation, demonstrating the benefit of optimal passivation of low aspect ratio selectively grown Ge.

引用

页数：2