Low-frequency noise suppression and dc characteristics enhancement in sub-μm metamorphic p-MOSFETs with strained Si0.3Ge0.7 channel grown by MBE

For the first time, we have demonstrated the reduced low-frequency (LF) noise in sub-mum metamorphic high Ge content p-Si0.3Ge0.7 MOSFETs in comparison with p-Si MOSFETs at 293 K. Three times lower LF noise over 1-100 Hz range at V-DS = -50 mV and V-G - V-TH = - 1.5 V was measured for the 0.55 mum effective gate length p-Si0.3Ge0.7 MOSFET compared with p-Si MOSFET. Over three times drain current enhancement in saturation region of output current-voltage characteristics at V-DS = -2.5 V for a 0.55 muM p-Si0.3Ge0.7 MOSFET in comparison with p-Si MOSFET is observed. (C) 2003 Elsevier B.V. All rights reserved.