Thin-Film Memristors and Memcapacitors for 3D Integration of Neuromorphic Systems

被引:0
|
作者
Kimura, Mutsumi [1 ]
Shiomi, Shu [1 ]
Komai, Norito [1 ]
Iwagi, Etsuko [1 ]
Yokoyama, Tomoharu [1 ]
Ishisaki, Yuma [1 ]
Matsuda, Tokiyoshi [2 ]
Kawanishi, Hidenori [1 ]
机构
[1] Ryukoku Univ, Dept Elect & Informat, Otsu, Shiga, Japan
[2] Kindai Univ, Fac Sci & Engn, Higashiosaka, Osaka, Japan
关键词
thin film; memristor; memcapacitor; 3D integration; neuromorphic system; OXIDE;
D O I
10.1109/SOCC58585.2023.10257032
中图分类号
TP301 [理论、方法];
学科分类号
081202 ;
摘要
Thin-film memristors and memcapacitors have been developed for 3D integration of neuromorphic systems. These devices have extremely simple structures, can be stacked by deposition methods such as sputtering and mist CVD methods, and therefore are suitable for astronomical large-scale integration. Moreover, nonvolatile plasticity of the conductance and capacitance characteristics is obtained according to the semiconductor physics. Finally, they are actually implemented in neuromorphic systems, and elementary functions of artificial intelligence are confirmed, as well as future possibility of ultra-low power consumption.
引用
收藏
页码:208 / 213
页数:6
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