Thin-Film Memristors and Memcapacitors for 3D Integration of Neuromorphic Systems

被引：0

作者：

Kimura, Mutsumi ^{[1
]}

Shiomi, Shu ^{[1
]}

Komai, Norito ^{[1
]}

Iwagi, Etsuko ^{[1
]}

Yokoyama, Tomoharu ^{[1
]}

Ishisaki, Yuma ^{[1
]}

Matsuda, Tokiyoshi ^{[2
]}

Kawanishi, Hidenori ^{[1
]}

机构：

[1] Ryukoku Univ, Dept Elect & Informat, Otsu, Shiga, Japan

[2] Kindai Univ, Fac Sci & Engn, Higashiosaka, Osaka, Japan

来源：

2023 IEEE 36TH INTERNATIONAL SYSTEM-ON-CHIP CONFERENCE, SOCC | 2023年

关键词：

thin film; memristor; memcapacitor; 3D integration; neuromorphic system; OXIDE;

D O I：

10.1109/SOCC58585.2023.10257032

中图分类号：

TP301 [理论、方法];

学科分类号：

081202 ;

摘要：

Thin-film memristors and memcapacitors have been developed for 3D integration of neuromorphic systems. These devices have extremely simple structures, can be stacked by deposition methods such as sputtering and mist CVD methods, and therefore are suitable for astronomical large-scale integration. Moreover, nonvolatile plasticity of the conductance and capacitance characteristics is obtained according to the semiconductor physics. Finally, they are actually implemented in neuromorphic systems, and elementary functions of artificial intelligence are confirmed, as well as future possibility of ultra-low power consumption.

引用

页码：208 / 213

页数：6

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