DFT Study of Electronic, Optical, Thermoelectric, and Thermodynamic Properties of the HfO2 Material

被引:6
|
作者
Benyoussef, S. [1 ]
Jabar, A. [2 ,3 ]
Tahiri, N. [1 ]
Bahmad, L. [1 ]
机构
[1] Mohammed V Univ, Fac Sci, Lab Condensed Matter & Interdisciplinary Sci LaMCS, Rabat, Morocco
[2] Hassan II Univ Casablanca, Fac Sci Ain Chock, LPMAT, BP 5366, Casablanca, Morocco
[3] Mohammed V Univ, Sci Fac, LPHE MS, Rabat, Morocco
关键词
HfO2; material; DFT; Optical properties; Thermoelectric properties; Thermodynamic properties; STATE; CODE;
D O I
10.1007/s13538-024-01459-1
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
In this study, our primary objective is to examine the effect of strain on the HfO2 compound, delving into its diverse array of physical attributes. Our investigation encompassed an exploration of its structural, electronic, optical, thermodynamic, and thermoelectric characteristics, both under tensile and compressive strain conditions. To undertake this research, we used the density functional theory (DFT) as implemented in the Wien2k software package. To pinpoint the exchange-correlation potential, we adopted the GGA-PBE (Perdew, Burke, and Ernzerhof) method. Our findings unequivocally establish that the HfO2 compound behaves as an insulator. Furthermore, we meticulously evaluated a wide spectrum of optical properties, encompassing electron energy loss, absorption coefficient, as well as the real and imaginary components of the dielectric tensors and optical conductivity. Additionally, we computed the Debye temperature and the Gr & uuml;neisen parameter. In tandem with these investigations, we probed the electrical conductivity, Seebeck coefficient, and electronic conductivity. Notably, our results unveiled that the compound demonstrates p-type behavior, characterized by positive values for the Seebeck coefficient. These outcomes could be useful for the properties of the studied HfO2 compound.
引用
收藏
页数:11
相关论文
共 50 条
  • [31] A first-principle study of electronic, thermoelectric, and optical properties of sulfur doped c-HfO2
    Kumar, Rajesh
    Kumar, Ramesh
    Vij, Ankush
    Singh, Mukhtiyar
    PHYSICA SCRIPTA, 2022, 97 (07)
  • [32] Optical spectroscopic study of the SiN/HfO2 interfacial formation during rf sputtering of HfO2
    Toledano-Luque, M.
    Lucia, M. L.
    del Prado, A.
    San Andres, E.
    Martil, I.
    Gonzalez-Diaz, G.
    APPLIED PHYSICS LETTERS, 2007, 91 (19)
  • [33] Study of electronic, optical, thermodynamic, and thermoelectric properties of GeC bulk and monolayer structure
    Goudarzi, M.
    Karamdel, J.
    Hassanabadi, H.
    Zorriasatein, Sh.
    MODERN PHYSICS LETTERS B, 2024, 38 (24):
  • [34] Effect of Interface Structure on the Hydrophobicity, Mechanical and Optical Properties of HfO2/Mo/HfO2 Multilayer Films
    P. Dubey
    Anil K. Battu
    V. Shutthanandan
    C. V. Ramana
    JOM, 2019, 71 : 3711 - 3719
  • [35] Electronic, optical and thermoelectric properties of WSe2–InN 2D interface: A DFT study
    Ghadri A.
    Boochani A.
    Hojabri A.
    Hajakbari F.
    Solid State Communications, 2022, 354
  • [36] Effect of La and Sc Doping on the Structural, Electronic, and Optical Properties of Cubic HfO2: A DFT-Based Spin-Polarized Calculation
    Kar, Jayanta Kumar
    Rano, Ruma
    Chaudhury, Saurabh
    JOURNAL OF ELECTRONIC MATERIALS, 2023, 52 (09) : 6234 - 6246
  • [37] The Effect of Nb Incorporation on the Electronic Properties of Anodic HfO2
    Zaffora, Andrea
    Di Franco, Francesco
    Di Quarto, Francesco
    Macaluso, Roberto
    Mosca, Mauro
    Habazaki, Hiroki
    Santamaria, Monica
    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2017, 6 (04) : N25 - N31
  • [38] Effect of Interface Structure on the Hydrophobicity, Mechanical and Optical Properties of HfO2/Mo/HfO2 Multilayer Films
    Dubey, P.
    Battu, Anil K.
    Shutthanandan, V.
    Ramana, C. V.
    JOM, 2019, 71 (10) : 3711 - 3719
  • [39] Effect of La and Sc Doping on the Structural, Electronic, and Optical Properties of Cubic HfO2: A DFT-Based Spin-Polarized Calculation
    Jayanta Kumar Kar
    Ruma Rano
    Saurabh Chaudhury
    Journal of Electronic Materials, 2023, 52 : 6234 - 6246
  • [40] Electronic Properties of Atomic Layer Deposited HfO2 Thin Films on InGaAs Compared to HfO2/GaAs Semiconductors
    Cashwell Jr, Irving K.
    Thomas, Donovan A.
    Skuza, Jonathan R.
    Pradhan, Aswini K.
    CRYSTALS, 2024, 14 (09)