DFT Study of Electronic, Optical, Thermoelectric, and Thermodynamic Properties of the HfO2 Material

被引:6
|
作者
Benyoussef, S. [1 ]
Jabar, A. [2 ,3 ]
Tahiri, N. [1 ]
Bahmad, L. [1 ]
机构
[1] Mohammed V Univ, Fac Sci, Lab Condensed Matter & Interdisciplinary Sci LaMCS, Rabat, Morocco
[2] Hassan II Univ Casablanca, Fac Sci Ain Chock, LPMAT, BP 5366, Casablanca, Morocco
[3] Mohammed V Univ, Sci Fac, LPHE MS, Rabat, Morocco
关键词
HfO2; material; DFT; Optical properties; Thermoelectric properties; Thermodynamic properties; STATE; CODE;
D O I
10.1007/s13538-024-01459-1
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
In this study, our primary objective is to examine the effect of strain on the HfO2 compound, delving into its diverse array of physical attributes. Our investigation encompassed an exploration of its structural, electronic, optical, thermodynamic, and thermoelectric characteristics, both under tensile and compressive strain conditions. To undertake this research, we used the density functional theory (DFT) as implemented in the Wien2k software package. To pinpoint the exchange-correlation potential, we adopted the GGA-PBE (Perdew, Burke, and Ernzerhof) method. Our findings unequivocally establish that the HfO2 compound behaves as an insulator. Furthermore, we meticulously evaluated a wide spectrum of optical properties, encompassing electron energy loss, absorption coefficient, as well as the real and imaginary components of the dielectric tensors and optical conductivity. Additionally, we computed the Debye temperature and the Gr & uuml;neisen parameter. In tandem with these investigations, we probed the electrical conductivity, Seebeck coefficient, and electronic conductivity. Notably, our results unveiled that the compound demonstrates p-type behavior, characterized by positive values for the Seebeck coefficient. These outcomes could be useful for the properties of the studied HfO2 compound.
引用
收藏
页数:11
相关论文
共 50 条
  • [21] Structural and electronic properties of cubic HfO2 surfaces
    Chen, G. H.
    Hou, Z. F.
    Gong, X. G.
    COMPUTATIONAL MATERIALS SCIENCE, 2008, 44 (01) : 46 - 52
  • [22] A DFT investigation of the electronic, optical, and thermoelectric properties of pentadiamond
    Tromer, Raphael M.
    Felix, Levi C.
    Woellner, Cristiano F.
    Galvao, Douglas S.
    CHEMICAL PHYSICS LETTERS, 2021, 763
  • [23] Relationship of HfO2 material properties and transistor performance
    Kirsch, P. D.
    Quevedo, M. A.
    Pant, G.
    Krishnan, S.
    Song, S. C.
    Li, H. J.
    Peterson, J. J.
    Lee, B. H.
    Wallace, R. W.
    Kim, M.
    Gnade, B. E.
    2006 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS, AND APPLICATIONS (VLSI-TSA), PROCEEDINGS OF TECHNICAL PAPERS, 2006, : 113 - +
  • [24] A comparative DFT study on electronic, thermodynamic and optical properties of telluride compounds
    Shah, Esha V.
    Roy, Debesh R.
    COMPUTATIONAL MATERIALS SCIENCE, 2014, 88 : 156 - 162
  • [25] Structural, electronic, thermodynamic and optical properties of SnlSemSn clusters: A DFT study
    Kashyap, Shilpa
    Batra, Kriti
    CHEMICAL PHYSICS, 2022, 558
  • [26] First principles study of the structural, electronic, and dielectric properties of amorphous HfO2
    Chen, Tsung-Ju
    Kuo, Chin-Lung
    JOURNAL OF APPLIED PHYSICS, 2011, 110 (06)
  • [27] Photoluminescence study of the electronic structure of HfO2 films
    A. A. Rastorguev
    V. I. Belyi
    T. P. Smirnova
    L. V. Yakovkina
    Journal of Structural Chemistry, 2008, 49
  • [28] Optical and mechanical properties of RLVIP HfO2 films
    Kunz, Andrea
    Hallbauer, Antje
    Huber, Daniel
    Pulker, Hans K.
    VAKUUM IN FORSCHUNG UND PRAXIS, 2006, 18 (05) : 12 - 16
  • [29] Photoluminescence study of the electronic structure of HfO2 films
    Rastorguev, A. A.
    Belyi, V. I.
    Smirnova, T. P.
    Yakovkina, L. V.
    JOURNAL OF STRUCTURAL CHEMISTRY, 2008, 49 (01) : 21 - 30
  • [30] Effects of substrate temperature on properties of HfO2, HfO2:Al and HfO2:W films
    Lin, Su-Shia
    Liao, Chung-Sheng
    Fan, Sheng-You
    SURFACE & COATINGS TECHNOLOGY, 2015, 271 : 269 - 275