Photoreflectance spectroscopy of BiOCl epitaxial thin films

被引：1

作者：

Nishiwaki, T. ^{[1
]}

Sun, Z. ^{[2
]}

Oka, D. ^{[3
]}

Fukumura, T. ^{[4
,5
]}

Makino, T. ^{[1
]}

机构：

[1] Univ Fukui, Res Ctr Dev Far Infrared Reg, 3-9-1 Bunkyo, Fukui 9108507, Japan

[2] Wuhan Univ Technol, State Key Lab Adv Technol Mat Synth & Proc, Wuhan 430070, Peoples R China

[3] Tokyo Metropolitan Univ, Grad Sch Sci, Dept Chem, Hachioji 1920397, Japan

[4] Tohoku Univ, Grad Sch Sci, Dept Chem, Sendai 9808578, Japan

[5] Tohoku Univ, Adv Inst Mat Res WPI AIMR, Sendai 9808577, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2024年 / 63卷 / 02期

关键词：

electronic structures; dielectric functions; spectroscopy; excitons; LATTICE-BOLTZMANN MODEL; TEMPERATURE-DEPENDENCE; GAAS; GAP;

D O I：

10.35848/1347-4065/ad0306

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have observed a new optical transition in the photoreflectance spectra of indirect-gap BiOCl thin films, which were grown on SrTiO3 substrates. The position of this transition is close in energy to its bulk critical point (CP) energy. Moreover, these are significantly lower than a higher-lying direct-type CP from an energetic point of view. The spectral line shape analysis for our observed signal suggests the presence of an excitonic effect of this compound. We determined its dependence of the optical anomaly on temperature ranging from 80 K to RT. We adopted the Varshni model for this analysis. At last, we compared photonic properties of BiOCl with those of an element and binary semiconductors.

引用

页数：5

共 50 条

[31] LUMINESCENCE OF EPITAXIAL ZNS THIN FILMS
KUZNETSOV, MF
RAMAZANOV, PE
IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1970, (02): : 148 - +
[32] Defects in epitaxial insulating thin films
Inst. für Festkörperphysik, Universität Hannover, Appelstraße 2, D-30167 Hannover, Germany
J Phys Condens Matter, 49 (9943-9954):
[33] Epitaxial Thin Films for Hyperbolic Metamaterials
Fullager, D.
Alisafaee, H.
Tsu, R.
Fiddy, M. A.
HIGH CONTRAST METASTRUCTURES III, 2014, 8995
[34] EPITAXIAL GALLIUM ARSENIDE THIN FILMS
STEINBER.RF
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1966, 3 (05): : 315 - &
[35] Intrinsic stress of epitaxial thin films
Koch, R.
Winau, D.
Rieder, K.H.
Physica Scripta T, 1993, T49B : 539 - 543
[36] Strain quantification in epitaxial thin films
Cushley, M.
EMAG: ELECTRON MICROSCOPY AND ANALYSIS GROUP CONFERENCE 2007, 2008, 126
[37] Epitaxial stabilization in thin films of oxides
Kaul, A
Gorbenko, O
Graboy, I
Novojilov, M
Bosak, A
Kamenev, A
Antonov, A
Nikulin, I
Mikhaylov, A
Kartavtzeva, M
SOLID-STATE CHEMISTRY OF INORGANIC MATERIALS IV, 2003, 755 : 291 - 302
[38] Epitaxial spinel ferrite thin films
Suzuki, Y
ANNUAL REVIEW OF MATERIALS RESEARCH, 2001, 31 : 265 - 289
[39] Epitaxial EuO thin films on GaAs
Swartz, A. G.
Ciraldo, J.
Wong, J. J. I.
Li, Yan
Han, Wei
Lin, Tao
Mack, S.
Shi, J.
Awschalom, D. D.
Kawakami, R. K.
APPLIED PHYSICS LETTERS, 2010, 97 (11)
[40] Defects in epitaxial insulating thin films
Tegenkamp, C
Pfnür, H
Ernst, W
Malaske, U
Wollschläger, J
Peterka, D
Schröder, KM
Zielasek, V
Henzler, M
JOURNAL OF PHYSICS-CONDENSED MATTER, 1999, 11 (49) : 9943 - 9954

← 1 2 3 4 5 →