Epitaxial EuO thin films on GaAs

被引：48

作者：

Swartz, A. G. ^{[1
]}

Ciraldo, J. ^{[1
]}

Wong, J. J. I. ^{[1
]}

Li, Yan ^{[1
]}

Han, Wei ^{[1
]}

Lin, Tao ^{[1
]}

Mack, S. ^{[2
]}

Shi, J. ^{[1
]}

Awschalom, D. D. ^{[2
]}

Kawakami, R. K. ^{[1
]}

机构：

[1] Univ Calif Riverside, Dept Phys & Astron, Riverside, CA 92521 USA

[2] Univ Calif Santa Barbara, Ctr Spintron & Quantum Computat, Santa Barbara, CA 93106 USA

来源：

APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 11期

关键词：

MOLECULAR-BEAM EPITAXY; MAGNETIC-PROPERTIES; SEMICONDUCTOR; SILICON; CRYSTALLINE; TRANSPORT; GROWTH; OXIDES; MGO;

D O I：

10.1063/1.3490649

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate the epitaxial growth of EuO on GaAs by reactive molecular beam epitaxy. Thin films are grown in an adsorption-controlled regime with the aid of an MgO diffusion barrier. Despite the large lattice mismatch, it is shown that EuO grows well on MgO(001) with excellent magnetic properties. Epitaxy on GaAs is cube-on-cube and longitudinal magneto-optic Kerr effect measurements demonstrate a large Kerr rotation of 0.57 degrees, a significant remanent magnetization, and a Curie temperature of 69 K. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3490649]

引用

页数：3

共 50 条

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