Van der Waals-Interface-Dominated All-2D Electronics

被引:42
|
作者
Zhang, Xiankun [1 ,2 ]
Zhang, Yanzhe [1 ,2 ]
Yu, Huihui [1 ,2 ]
Zhao, Hang [1 ,2 ]
Cao, Zhihong [1 ,2 ]
Zhang, Zheng [1 ,2 ]
Zhang, Yue [1 ,2 ]
机构
[1] Univ Sci & Technol Beijing, Acad Adv Interdisciplinary Sci & Technol, Beijing Adv Innovat Ctr Mat Genome Engn, Beijing 100083, Peoples R China
[2] Univ Sci & Technol Beijing, Sch Mat Sci & Engn, Beijing Key Lab Adv Energy Mat & Technol, Beijing 100083, Peoples R China
基金
中国国家自然科学基金;
关键词
2D materials; band alignment; electronics; heterostructures; van der Waals interfaces; HEXAGONAL BORON-NITRIDE; FIELD-EFFECT TRANSISTORS; ATOMIC LAYER DEPOSITION; 2D MATERIALS; CONTACT RESISTANCE; EPITAXIAL-GROWTH; 2-DIMENSIONAL HETEROSTRUCTURES; CHARGE-TRANSFER; BAND OFFSETS; GRAPHENE;
D O I
10.1002/adma.202207966
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The interface is the device. As the feature size rapidly shrinks, silicon-based electronic devices are facing multiple challenges of material performance decrease and interface quality degradation. Ultrathin 2D materials are considered as potential candidates in future electronics by their atomically flat surfaces and excellent immunity to short-channel effects. Moreover, due to naturally terminated surfaces and weak van der Waals (vdW) interactions between layers, 2D materials can be freely stacked without the lattice matching limit to form high-quality heterostructure interfaces with arbitrary components and twist angles. Controlled interlayer band alignment and optimized interfacial carrier behavior allow all-2D electronics based on 2D vdW interfaces to exhibit more comprehensive functionality and better performance. Especially, achieving the same computing capacity of multiple conventional devices with small footprint all-2D devices is considered to be the key development direction of future electronics. Herein, the unique properties of all-2D vdW interfaces and their construction methods are systematically reviewed and the main performance contributions of different vdW interfaces in 2D electronics are summarized, respectively. Finally, the recent progress and challenges for all-2D vdW electronics are discussed, and how to improve the compatibility of 2D material devices with silicon-based industrial technology is pointed out as a critical challenge.
引用
收藏
页数:29
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