Van der Waals-Interface-Dominated All-2D Electronics

被引:42
|
作者
Zhang, Xiankun [1 ,2 ]
Zhang, Yanzhe [1 ,2 ]
Yu, Huihui [1 ,2 ]
Zhao, Hang [1 ,2 ]
Cao, Zhihong [1 ,2 ]
Zhang, Zheng [1 ,2 ]
Zhang, Yue [1 ,2 ]
机构
[1] Univ Sci & Technol Beijing, Acad Adv Interdisciplinary Sci & Technol, Beijing Adv Innovat Ctr Mat Genome Engn, Beijing 100083, Peoples R China
[2] Univ Sci & Technol Beijing, Sch Mat Sci & Engn, Beijing Key Lab Adv Energy Mat & Technol, Beijing 100083, Peoples R China
基金
中国国家自然科学基金;
关键词
2D materials; band alignment; electronics; heterostructures; van der Waals interfaces; HEXAGONAL BORON-NITRIDE; FIELD-EFFECT TRANSISTORS; ATOMIC LAYER DEPOSITION; 2D MATERIALS; CONTACT RESISTANCE; EPITAXIAL-GROWTH; 2-DIMENSIONAL HETEROSTRUCTURES; CHARGE-TRANSFER; BAND OFFSETS; GRAPHENE;
D O I
10.1002/adma.202207966
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The interface is the device. As the feature size rapidly shrinks, silicon-based electronic devices are facing multiple challenges of material performance decrease and interface quality degradation. Ultrathin 2D materials are considered as potential candidates in future electronics by their atomically flat surfaces and excellent immunity to short-channel effects. Moreover, due to naturally terminated surfaces and weak van der Waals (vdW) interactions between layers, 2D materials can be freely stacked without the lattice matching limit to form high-quality heterostructure interfaces with arbitrary components and twist angles. Controlled interlayer band alignment and optimized interfacial carrier behavior allow all-2D electronics based on 2D vdW interfaces to exhibit more comprehensive functionality and better performance. Especially, achieving the same computing capacity of multiple conventional devices with small footprint all-2D devices is considered to be the key development direction of future electronics. Herein, the unique properties of all-2D vdW interfaces and their construction methods are systematically reviewed and the main performance contributions of different vdW interfaces in 2D electronics are summarized, respectively. Finally, the recent progress and challenges for all-2D vdW electronics are discussed, and how to improve the compatibility of 2D material devices with silicon-based industrial technology is pointed out as a critical challenge.
引用
收藏
页数:29
相关论文
共 50 条
  • [11] Self-Powered Photodetector with High Performance Based on All-2D NbSe2/MoSe2 van der Waals Heterostructure
    Li, Chunyu
    Wu, Zhiming
    Zhang, Chaoyi
    Peng, Silu
    Han, Jiayue
    He, Meiyu
    Dong, Xiang
    Gou, Jun
    Wang, Jun
    Jiang, Yadong
    ADVANCED OPTICAL MATERIALS, 2023, 11 (22)
  • [12] Orientation-engineered 2D electronics on van der Waals dielectrics
    Wang, Weijun
    Zhang, Yuxuan
    Wang, Wei
    Luo, Min
    Meng, You
    Li, Bowen
    Yan, Yan
    Yin, Di
    Xie, Pengshan
    Li, Dengji
    Chen, Dong
    Quan, Quan
    Yip, Senpo
    Hu, Weida
    Ho, Johnny C.
    MATTER, 2024, 7 (06) : 2236 - 2249
  • [13] MOLECULAR ELECTRONICS Van der Waals rectifiers
    Bernasek, Steven L.
    NATURE NANOTECHNOLOGY, 2013, 8 (02) : 80 - 81
  • [14] Van der Waals materials for paper electronics
    Zhang, Wenliang
    He, Kexin
    Castellanos-Gomez, Andres
    Xie, Yong
    TRENDS IN CHEMISTRY, 2023, 5 (12): : 920 - 934
  • [15] Vertical Integration of 2D Building Blocks for All-2D Electronics
    Tang, Jian
    Wang, Qinqin
    Wei, Zheng
    Shen, Cheng
    Lu, Xiaobo
    Wang, Shuopei
    Zhao, Yanchong
    Liu, Jieying
    Li, Na
    Chu, Yanbang
    Tian, Jinpeng
    Wu, Fanfan
    Yang, Wei
    He, Congli
    Yang, Rong
    Shi, Dongxia
    Watanabe, Kenji
    Taniguchi, Takashi
    Zhang, Guangyu
    ADVANCED ELECTRONIC MATERIALS, 2020, 6 (12)
  • [16] Probing the interface strain in a 3D-2D van der Waals heterostructure
    Sun, Xin
    Shi, Jian
    Washington, Morris A.
    Lu, Toh-Ming
    APPLIED PHYSICS LETTERS, 2017, 111 (15)
  • [17] Synthesis of hexagonal boron nitride heterostructures for 2D van der Waals electronics
    Kim, Ki Kang
    Lee, Hyun Seok
    Lee, Young Hee
    CHEMICAL SOCIETY REVIEWS, 2018, 47 (16) : 6342 - 6369
  • [18] Emerging van der Waals Dielectrics of Inorganic Molecular Crystals for 2D Electronics
    Liu, Lixin
    Liu, Kailang
    Zhai, Tianyou
    ACS NANO, 2024, 18 (09) : 6733 - 6739
  • [19] Van der Waals nanomesh electronics on arbitrary surfaces
    Meng, You
    Li, Xiaocui
    Kang, Xiaolin
    Li, Wanpeng
    Wang, Wei
    Lai, Zhengxun
    Wang, Weijun
    Quan, Quan
    Bu, Xiuming
    Yip, SenPo
    Xie, Pengshan
    Chen, Dong
    Li, Dengji
    Wang, Fei
    Yeung, Chi-Fung
    Lan, Changyong
    Liu, Chuntai
    Shen, Lifan
    Lu, Yang
    Chen, Furong
    Wong, Chun-Yuen
    Ho, Johnny C.
    NATURE COMMUNICATIONS, 2023, 14 (01)
  • [20] Van der Waals thin-film electronics
    Zhaoyang Lin
    Yu Huang
    Xiangfeng Duan
    Nature Electronics, 2019, 2 : 378 - 388