Thermal Characterization of InP/GaAsSb DHBTs: Effect of Emitter and Collector Layers

被引：2
|
作者：
Ciabattini, F. [1 ]
Arabhavi, A. M. [1 ]
Hamzeloui, S. [1 ]
Ebrahimi, M. [1 ]
Ostinelli, O. [1 ]
Bolognesi, C. R. [1 ]
机构：
[1] Swiss Fed Inst Technol, Millimeter Wave Elect MWE Grp, Gloriastr 35, CH-8092 Zurich, Switzerland
来源：
2023 IEEE BICMOS AND COMPOUND SEMICONDUCTOR INTEGRATED CIRCUITS AND TECHNOLOGY SYMPOSIUM, BCICTS | 2023年
关键词：
InP/GaAsSb; Double Heterojunction Bipolar Transistors (DHBTs); Thermal Resistance; Junction Temperature;
D O I：
10.1109/BCICTS54660.2023.10310928
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Modern telecommunication systems require transistors that can deliver high power levels at high frequencies. This poses challenges for the reliability of transistors operating close to their peak performance. The thermal behavior of mm-wave InP/GaAsSb DHBTs is studied for several emitter contact widths and lengths, and various epitaxial design alternatives are considered. The effect of the emitter and collector layer stacks is reported. Straightforward modifications to the GaInAs sub-collector contact thickness and composition significantly reduce the thermal resistance RTH and junction temperature. We show that a thin emitter yields similar thermal improvements in characteristics as improvements made to the collector design.
引用
收藏
页码：24 / 27
页数：4
相关论文
共 50 条
  • [21] Current transport of GaAsSb-based DHBTs with different emitter structures
    Pan, Chun-ting
    Wang, Che-ming
    Hsin, Yue-ming
    Zhu, H. J.
    Kuo, J. M.
    Kao, Y. C.
    SOLID-STATE ELECTRONICS, 2009, 53 (06) : 574 - 577
  • [22] Ultrahigh performance staggered lineup ("type II") InP/GaAsSb/InP NpN DHBTs
    Bolognesi, CR
    Dvorak, MW
    Pitts, OJ
    Matine, N
    Watkins, SP
    2001 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS, 2001, : 27 - 30
  • [23] An evaluation of extraction methods for the emitter resistance for InP DHBTs
    Nardmann, T.
    Krause, J.
    Schroter, M.
    2014 IEEE COMPOUND SEMICONDUCTOR INTEGRATED CIRCUIT SYMPOSIUM (CSICS): INTEGRATED CIRCUITS IN GAAS, INP, SIGE, GAN AND OTHER COMPOUND SEMICONDUCTORS, 2014,
  • [24] InP/GaAsSb DHBTs With 500-GHz Maximum Oscillation Frequency
    Loevblom, Rickard
    Flueckiger, Ralf
    Zeng, Yuping
    Ostinelli, Olivier
    Alt, Andreas R.
    Benedickter, Hansruedi
    Bolognesi, C. R.
    IEEE ELECTRON DEVICE LETTERS, 2011, 32 (05) : 629 - 631
  • [25] InP/GaAsSb DHBTs for THz Applications and Improved Extraction of their Cutoff Frequencies
    Bolognesi, C. R.
    Fluckiger, R.
    Alexandrova, M.
    Quan, W.
    Lovblom, R.
    Ostinelli, O.
    2016 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), 2016,
  • [26] Numerical simulation of new InP/GaAsSb-DHBTs using ATLAS
    San Vicente, LO
    López-González, JM
    García-Loureiro, A
    2005 SPANISH CONFERENCE ON ELECTRON DEVICES, PROCEEDINGS, 2005, : 187 - 189
  • [27] InP/GaAsSb/InP DHBTs with fT=300 GHz and high maximum oscillation frequencies:: The effect of scaling on device performance
    Liu, HG
    DiSanto, DW
    Watkins, SP
    Bolognesi, CR
    Physica Status Solidi C - Current Topics in Solid State Physics, Vol 3 no 3, 2006, 3 (03): : 461 - 464
  • [28] InP/GaAsSb DHBTs with Simultaneous fT/fMAX=428/621 GHz
    Loevblom, Rickard
    Flueckiger, Ralf
    Alexandrova, Maria
    Ostinelli, Olivier
    Bolognesi, C. R.
    IEEE ELECTRON DEVICE LETTERS, 2013, 34 (08) : 984 - 986
  • [29] High-current-gain InP/GaInP/GaAsSb/InP DHBTs with fT=436 GHz
    Liu, H. G.
    Ostinelli, O.
    Zeng, Y. P.
    Bolognesi, C. R.
    IEEE ELECTRON DEVICE LETTERS, 2007, 28 (10) : 852 - 855
  • [30] Development of Ultrahigh-Speed InP/GaAsSb/InP DHBTs: Are Terahertz Bandwidth Transistors Realistic?
    Bolognesi, C. R.
    Liu, H.
    Ostinelli, O.
    Zeng, Y.
    2008 EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC), 2008, : 107 - 110
12345