InP/GaAsSb DHBTs With 500-GHz Maximum Oscillation Frequency

被引：17
|
作者：
Loevblom, Rickard [1 ]
Flueckiger, Ralf [1 ]
Zeng, Yuping [1 ]
Ostinelli, Olivier [1 ]
Alt, Andreas R. [1 ]
Benedickter, Hansruedi [1 ]
Bolognesi, C. R. [1 ]
机构：
[1] ETH, Millimeter Wave Elect Grp, CH-8092 Zurich, Switzerland
来源：
IEEE ELECTRON DEVICE LETTERS | 2011年 / 32卷 / 05期
关键词：
Double heterojunction bipolar transistors (DHBTs); InP/GaAsSb; maximum oscillation frequency (f(MAX)); millimeter-wave transistors; GHZ; BVCEO; BASE;
D O I：
10.1109/LED.2011.2118738
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report the realization of 0.3-mu m emitter InP/GaAsSb/InP DHBTs with cutoff frequencies f(T) = 365 GHz and f(MAX) = 501 GHz. Our devices were implemented with a 15-nm C-doped graded base and a 125-nm InP collector and feature a peak current gain beta = 35, with a base sheet resistance R(SH) = 1160 Omega/sq. The present transistors are the first InP/GaAsSb DHBTs to feature f(MAX) > 500 GHz, according to three extraction schemes. The present transistor performance is limited by an undepleted collector layer associated with a doping tail extending from the subcollector.
引用
收藏
页码：629 / 631
页数：3
相关论文
共 50 条
  • [1] InP/GaAsSb/InP DHBTs with fT=300 GHz and high maximum oscillation frequencies:: The effect of scaling on device performance
    Liu, HG
    DiSanto, DW
    Watkins, SP
    Bolognesi, CR
    Physica Status Solidi C - Current Topics in Solid State Physics, Vol 3 no 3, 2006, 3 (03): : 461 - 464
  • [2] InP/GaAsSb DHBTs with Simultaneous fT/fMAX=428/621 GHz
    Loevblom, Rickard
    Flueckiger, Ralf
    Alexandrova, Maria
    Ostinelli, Olivier
    Bolognesi, C. R.
    IEEE ELECTRON DEVICE LETTERS, 2013, 34 (08) : 984 - 986
  • [3] High-current-gain InP/GaInP/GaAsSb/InP DHBTs with fT=436 GHz
    Liu, H. G.
    Ostinelli, O.
    Zeng, Y. P.
    Bolognesi, C. R.
    IEEE ELECTRON DEVICE LETTERS, 2007, 28 (10) : 852 - 855
  • [4] InP/GaAsSb/InP MULTIFINGER DHBTs FOR POWER APPLICATIONS
    Nodjiadjim, V.
    Riet, M.
    Scavennec, A.
    Berdaguer, P.
    Drisse, O.
    Derouin, E.
    Godin, J.
    Bove, P.
    Lijadi, M.
    2008 IEEE 20TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM), 2008, : 395 - +
  • [5] 400-GHz InP/GaAsSb DHBTs With Low-Noise Microwave Performance
    Zeng, Yuping
    Ostinelli, Olivier
    Loevblom, Rickard
    Alt, Andreas R.
    Benedickter, Hansruedi
    Bolognesi, C. R.
    IEEE ELECTRON DEVICE LETTERS, 2010, 31 (10) : 1122 - 1124
  • [6] InP/GaAsSb type-II DHBTs with fT>350 GHz
    Chu-Kung, BF
    Feng, M
    ELECTRONICS LETTERS, 2004, 40 (20) : 1305 - 1307
  • [7] High-Gain 500-GHz InP HBT Power Amplifiers
    Cheron, Jerome
    Jones, Rob D.
    Chamberlin, Richard A.
    Williams, Dylan F.
    Urteaga, Miguel E.
    Smith, Kassiopeia A.
    Jungwirth, Nicholas R.
    Bosworth, Bryan T. L.
    Long, Christian J.
    Orloff, Nathan D.
    Aaen, Peter H.
    Feldman, Afi D.
    2021 IEEE BICMOS AND COMPOUND SEMICONDUCTOR INTEGRATED CIRCUITS AND TECHNOLOGY SYMPOSIUM (BCICTS), 2021,
  • [8] Highly Efficient InP/GaAsSb DHBTs With 62% Power-Added Efficiency at 40 GHz
    Teppati, Valeria
    Zeng, Yuping
    Ostinelli, Olivier
    Bolognesi, C. R.
    IEEE ELECTRON DEVICE LETTERS, 2011, 32 (07) : 886 - 888
  • [9] Microwave noise characterisation of AlInAs/GaAsSb/InP DHBTs
    Zeng, Y. P.
    Benedickter, H.
    Wu, B. -R.
    Bolognesi, C. R.
    ELECTRONICS LETTERS, 2009, 45 (23) : 1190 - U65
  • [10] Impact of surface state modeling on the characteristics of InP/GaAsSb/InP DHBTs
    Tao, N. G.
    Liu, H. G.
    Bolognesi, C. R.
    SOLID-STATE ELECTRONICS, 2007, 51 (06) : 995 - 1001
12345