Investigation of χ(2)-Translated Optical Frequency Combs Tunability in Gallium Phosphide-on- Insulator Resonators

被引:2
|
作者
Wu, Pengzhuo [1 ]
Cheng, Weiren [1 ]
Ding, Ning [1 ]
Tang, Xingyu [1 ]
Geng, Zhaoting [1 ]
Liu, Zhenyu [1 ]
You, Mingjian [1 ]
Yu, Xiaolun [1 ]
Li, Yi [1 ]
Zhao, Qiancheng [1 ]
机构
[1] Southern Univ Sci & Technol, MOE Engn Res Ctr Integrated Circuits Next Generat, Sch Microelect, Shenzhen 518000, Peoples R China
来源
IEEE PHOTONICS JOURNAL | 2024年 / 16卷 / 02期
关键词
Gallium phosphide-on-insulator; Kerr frequency comb; sum frequency generation; integrated nonlinear photonics; GENERATION; EFFICIENCY; CONVERSION;
D O I
10.1109/JPHOT.2024.3365214
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We describe a synergistic optimization approach that enables highly efficient frequency translation of a Kerr optical frequency comb (OFC) from 1550 nm to 775 nm in a gallium phosphide-on-insulator (GaP-OI) microresonator. Key distinctions from previous GaP-OI works which focused on individual optical nonlinearity are that this work not only emphasizes the interaction between the second- and third-order nonlinearity, but also explores the tunability of the chi((2))-translated OFC through geometric and temperature tuning. We apply this approach to the burgeoning GaP-OI platform and demonstrate that a 50 mu m-radius ring resonator with a cross-section of 555 nm x 600 nm has an intracavity second harmonic (SH) generation efficiency as high as 71.5%/W, 3 times larger compared to the state-of-the-art designs. The sum-frequency (SF) comb at 775 nm has a geometric tuning sensitivity of 354 GHz/nm, and a thermal tuning sensitivity of 24.8 GHz/K, paving the way for post-fabrication trimming and in-situ spectral shaping, with a broader potential to realize highly efficient, wide-spectrum, and tunable on-chip nonlinear sources.
引用
收藏
页码:1 / 8
页数:8
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