Investigation of χ(2)-Translated Optical Frequency Combs Tunability in Gallium Phosphide-on- Insulator Resonators

被引：2

作者：

Wu, Pengzhuo ^{[1
]}

Cheng, Weiren ^{[1
]}

Ding, Ning ^{[1
]}

Tang, Xingyu ^{[1
]}

Geng, Zhaoting ^{[1
]}

Liu, Zhenyu ^{[1
]}

You, Mingjian ^{[1
]}

Yu, Xiaolun ^{[1
]}

Li, Yi ^{[1
]}

Zhao, Qiancheng ^{[1
]}

机构：

[1] Southern Univ Sci & Technol, MOE Engn Res Ctr Integrated Circuits Next Generat, Sch Microelect, Shenzhen 518000, Peoples R China

来源：

IEEE PHOTONICS JOURNAL | 2024年 / 16卷 / 02期

关键词：

Gallium phosphide-on-insulator; Kerr frequency comb; sum frequency generation; integrated nonlinear photonics; GENERATION; EFFICIENCY; CONVERSION;

D O I：

10.1109/JPHOT.2024.3365214

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We describe a synergistic optimization approach that enables highly efficient frequency translation of a Kerr optical frequency comb (OFC) from 1550 nm to 775 nm in a gallium phosphide-on-insulator (GaP-OI) microresonator. Key distinctions from previous GaP-OI works which focused on individual optical nonlinearity are that this work not only emphasizes the interaction between the second- and third-order nonlinearity, but also explores the tunability of the chi((2))-translated OFC through geometric and temperature tuning. We apply this approach to the burgeoning GaP-OI platform and demonstrate that a 50 mu m-radius ring resonator with a cross-section of 555 nm x 600 nm has an intracavity second harmonic (SH) generation efficiency as high as 71.5%/W, 3 times larger compared to the state-of-the-art designs. The sum-frequency (SF) comb at 775 nm has a geometric tuning sensitivity of 354 GHz/nm, and a thermal tuning sensitivity of 24.8 GHz/K, paving the way for post-fabrication trimming and in-situ spectral shaping, with a broader potential to realize highly efficient, wide-spectrum, and tunable on-chip nonlinear sources.

引用

页码：1 / 8

页数：8