Growth and characterization of GePb/Ge multiple quantum wells

被引：2

作者：

Liu, Xiangquan ^{[1
,2
]}

Zheng, Jun ^{[1
,2
]}

Huang, Qinxing ^{[1
,2
]}

Pang, Yaqing ^{[1
,2
]}

Zhang, Diandian ^{[1
,2
]}

Zhu, Yupeng ^{[1
,2
]}

Liu, Zhi ^{[1
,2
]}

Zuo, Yuhua ^{[1
,2
]}

Cheng, Buwen ^{[1
,2
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China

[2] Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2023年 / 934卷

关键词：

GePb alloy; Epitaxy; Multiple quantum well; Si photonics; ALLOY; PHOTOCONDUCTORS; PHOTODETECTORS; SUBSTRATE; SILICON; LEDS;

D O I：

10.1016/j.jallcom.2022.167954

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

GePb/Ge multiple quantum well (MQW) structures with a Pb content of up to 7.2% were successfully grown on Ge(100) substrates via sputtering epitaxy. Scanning electron microscopy revealed that both the Pb content in the GePb layer and Ge layer thickness affect the Pb surface segregation. High-resolution X-ray diffraction and cross-sectional transmission electron microscopy indicated that the GePb/Ge MQW struc-tures had a high crystal quality. Moreover, the thermal stability of the GePb/Ge MQW structures was in-vestigated, and the MQW structures were found to be stable at an annealing temperature of 500 degrees C. The band gaps of the GePb/Ge MQWs were measured, and the band gap regulation caused by the quantum confinement effect was verified. These results indicate that the MQW structure is a promising approach for realizing efficient GePb light sources.(c) 2022 Elsevier B.V. All rights reserved.

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页数：6

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