Photoluminescence and ultrafast intersubband relaxation in Ge/SiGe multiple quantum wells

被引：7

作者：

Gatti, E. ^{[1
,2
]}

Grilli, E. ^{[1
,2
]}

Guzzi, M. ^{[1
,2
]}

Chrastina, D. ^{[3
,4
]}

Isella, G. ^{[3
,4
]}

Chernikov, A. ^{[5
,6
]}

Bornwasser, V. ^{[5
,6
]}

Koester, N. ^{[5
,6
]}

Woscholski, R. ^{[5
,6
]}

Chatterjee, S. ^{[5
,6
]}

机构：

[1] Univ Milano Bicocca, L NESS, IT-20125 Milan, Italy

[2] Univ Milano Bicocca, Dipartimento Sci Mat, IT-20125 Milan, Italy

[3] Politecn Milan, L NESS, IT-22100 Como, Italy

[4] Politecn Milan, Dipartimento Fis, IT-22100 Como, Italy

[5] Univ Marburg, Fac Phys, DE-35032 Marburg, Germany

[6] Univ Marburg, Ctr Mat Sci, DE-35032 Marburg, Germany

来源：

PHYSICAL REVIEW B | 2011年 / 84卷 / 24期

关键词：

CARRIER DYNAMICS; SI;

D O I：

10.1103/PhysRevB.84.245319

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The intricate relaxation dynamics in compressively strained Ge quantum wells with Ge-rich SiGe barriers is investigated systematically for various excitation conditions. Evidence of efficient ultrafast intersubband relaxation in competition with the intrasubband electron cooling is found in continuous wave photoluminescence spectra measured with different excitation wavelengths. These findings are corroborated by time-resolved pump-probe absorption measurements yielding an intersubband relaxation time in the range of 100 fs.

引用

页数：5

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