Ultrafast intersubband relaxation and carrier cooling in GaN/AlN multiple quantum wells

被引：0

作者：

Hamazaki, J ^{[1
]}

Kunugita, H ^{[1
]}

Ema, K ^{[1
]}

Matsui, S ^{[1
]}

Ishii, Y ^{[1
]}

Morita, T ^{[1
]}

Kikuchi, A ^{[1
]}

Kishino, K ^{[1
]}

机构：

[1] Sophia Univ, Dept Phys, Chiyoda Ku, Tokyo, Japan

来源：

ULTRAFAST PHENOMENA XIV | 2005年 / 79卷

关键词：

D O I：

暂无

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We have investigated intersubband relaxation dynamics in GaN/AlN multiple quantum wells by the two-color pump-probe technique. We have clarified the ultrafast relaxation scenario which includes thermalization and cooling processes, and found that relaxation is influenced by a hot-phonon effect.

引用

页码：295 / 297

页数：3

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