Surface acoustic wave temperature sensor based on Pt/AlN/4 H-SiC structure for high-temperature environments

被引:5
|
作者
Yang, Zuodong [1 ]
Wang, Fang [1 ]
Nie, Weican [1 ]
Han, Xu [1 ]
Guo, Xiaowei [1 ]
Shan, Xin [1 ]
Lin, Xin [1 ]
Dun, Hongyu [1 ]
Sun, Zheng [1 ]
Xie, Yangyang [1 ]
Zhang, Kailiang [1 ]
机构
[1] Tianjin Univ Technol, Sch Integrated Circuit Sci & Engn, Tianjin Key Lab Film Elect & Commun Devices, Tianjin 300384, Peoples R China
关键词
Finite element method; SAW temperature sensor; AlN; SiC; High temperature; LANGASITE; PROPAGATION; FREQUENCY;
D O I
10.1016/j.sna.2023.114379
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this study, a two-dimensional finite element model (2D-FEM) of surface acoustic wave sensors based on Pt/ AlN/SiC structure was first constructed using the commercial software COMSOL Multiphysics. The hightemperature performance of SAW temperature sensors based on this structure was predicted by simulations. To improve the accuracy of the simulation, a set of pre-validated physical constants of both AlN and SiC were considered. And the relevant temperature coefficients of each layer of material were quoted. Following this, the fabrication of the SAW resonator was completed by the MEMS fabrication process. In order to measure the hightemperature performance of the SAW sensor, a specific probe station was established to make effective measurements from room temperature to 800 degrees C. The results show that the response of the SAW resonator is well linear with respect to temperature and it exhibits good stability. The temperature coefficient of frequency (TCF) was measured to be approximately - 25.9 ppm/degrees C, which is approximately consistent with the simulation results.
引用
收藏
页数:10
相关论文
共 50 条
  • [1] Surface Acoustic Wave sensor based on AlN/Sapphire structure for high temperature and high frequency applications
    Blampain, E.
    Elmazria, O.
    Aubert, T.
    Assouar, B.
    Legrani, O.
    [J]. 2011 IEEE SENSORS, 2011, : 610 - 613
  • [2] SiC based pressure sensor for high-temperature environments
    Wieczorek, Q.
    Schellin, B.
    Obermeier, E.
    Fagnani, G.
    Drera, L.
    [J]. 2007 IEEE SENSORS, VOLS 1-3, 2007, : 748 - 751
  • [3] Study of High-temperature MEMS Pressure Sensor based on SiC-AlN Structure
    Lv, Hao Jie
    Geng, Tao
    Hu, Guo Qing
    [J]. MICRO-NANO TECHNOLOGY XIV, PTS 1-4, 2013, 562-565 : 471 - +
  • [4] In situ high-temperature characterization of AlN-based surface acoustic wave devices
    Aubert, Thierry
    Bardong, Jochen
    Legrani, Ouarda
    Elmazria, Omar
    Assouar, M. Badreddine
    Bruckner, Gudrun
    Talbi, Abdelkrim
    [J]. JOURNAL OF APPLIED PHYSICS, 2013, 114 (01)
  • [5] Surface acoustic wave devices based on AlN/sapphire structure for high temperature applications
    Aubert, Thierry
    Elmazria, Omar
    Assouar, Badreddine
    Bouvot, Laurent
    Oudich, Mourad
    [J]. APPLIED PHYSICS LETTERS, 2010, 96 (20)
  • [6] High-temperature annealing of AlN films grown on 4H-SiC
    Brunner, F.
    Cancellara, L.
    Hagedorn, S.
    Albrecht, M.
    Weyers, M.
    [J]. AIP ADVANCES, 2020, 10 (12)
  • [7] Design and fabrication of an surface acoustic wave resonator based on AlN/4H-SiC material for harsh environments
    Wang, Wei-zhong
    Liang, Ji
    Ruan, Yong
    Pang, Wei
    You, Zheng
    [J]. JOURNAL OF ZHEJIANG UNIVERSITY-SCIENCE A, 2017, 18 (01): : 67 - 74
  • [8] Effect of Surface Structure on Transformation of 4H-SiC by High-Temperature Annealing
    Kawada, Yasuyuki
    Tawara, Takeshi
    Nakamura, Shun-ichi
    Gotoh, Masahide
    Tawara, Tae
    Iwamuro, Noriyuki
    Akimoto, Katsuhiro
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 2010, 49 (10) : 1013011 - 1013014
  • [9] HIGH TEMPERATURE SURFACE ACOUSTIC WAVE SENSOR WITH STRAIN ISOLATION STRUCTURE
    Pei, Guangyao
    Ma, Binghe
    Luo, Jian
    Deng, Jinjun
    [J]. 2021 21ST INTERNATIONAL CONFERENCE ON SOLID-STATE SENSORS, ACTUATORS AND MICROSYSTEMS (TRANSDUCERS), 2021, : 1194 - 1197
  • [10] Flexible Langasite-Based Surface Acoustic Wave Strain Sensor for High-Temperature Operation
    Li, Xiangrong
    Qin, Li
    Guo, Lifeng
    Tan, Qiulin
    [J]. IEEE SENSORS JOURNAL, 2023, 23 (16) : 18022 - 18031