Crosstalk reduction between microstrip lines using TL-shaped defected microstrip structure

被引：2
|
作者：
Li, Chenlong [1 ,2 ]
Wang, Yafei [1 ,2 ]
Li, Xuehua [2 ]
机构：
[1] Beijing Informat Sci & Technol Univ, Minist Educ Optoelect Measurement Technol & Instr, Key Lab, Beijing, Peoples R China
[2] Beijing Informat Sci & Technol Univ, Sch Informat & Commun Engn, Beijing, Peoples R China
来源：
ENGINEERING REPORTS | 2023年 / 5卷 / 01期
基金：
中国国家自然科学基金;
关键词：
crosstalk; defected microstrip structure (DMS); EM coupling; microstrip lines;
D O I：
10.1002/eng2.12559
中图分类号：
TP39 [计算机的应用];
学科分类号：
081203 ; 0835 ;
摘要：
Aiming at the problem of far-end crosstalk between microstrip lines, a method to improve crosstalk by using the TL-shaped defective microstrip structure (DMS) is proposed. This method optimizes the ratio of the capacitive coupling and the inductive coupling between coupled microstrip lines by etching TL-shaped DMSs on the microstrip lines, reducing the strength of electromagnetic coupling, thereby achieving an improvement in crosstalk. The quantitative equivalent model, S-parameters, and full-wave EM simulations are used to analyze the frequency response of the TL-shaped DMS and crosstalk between the microstrip lines. The results of High Frequency Structure Simulator software simulation and sample texts show that the TL-shaped DMS can effectively improve the far-end crosstalk while ensuring the transmission of signals on the microstrip line. In the frequency range of 0-8 GHz, the far-end crosstalk can be improved by about 11 dB, and the maximum can be improved by 42 dB. Compared with other DMSs, the TL-shaped DMS has better crosstalk improvement effect and practical application potential.
引用
收藏
页数：9
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