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- [41] Thermal evolution of ferroelectric behavior in epitaxial Hf0.5Zr0.5O2APPLIED PHYSICS LETTERS, 2020, 117 (14)Adkins, J. W.论文数: 0 引用数: 0 h-index: 0机构: Univ Illinois, Dept Civil & Mat Engn, Chicago, IL 60607 USA Argonne Natl Lab, Mat Sci Div, Lemont, IL 60439 USA Lab Oxide Res & Educ, 842 W Taylor St, Chicago, IL 60607 USA Univ Illinois, Dept Civil & Mat Engn, Chicago, IL 60607 USAFina, I.论文数: 0 引用数: 0 h-index: 0机构: Inst Ciencia Mat Barcelona ICMAB CSIC, Campus UAB, Barcelona 08193, Spain Univ Illinois, Dept Civil & Mat Engn, Chicago, IL 60607 USASanchez, F.论文数: 0 引用数: 0 h-index: 0机构: Inst Ciencia Mat Barcelona ICMAB CSIC, Campus UAB, Barcelona 08193, Spain Univ Illinois, Dept Civil & Mat Engn, Chicago, IL 60607 USABakaul, S. R.论文数: 0 引用数: 0 h-index: 0机构: Argonne Natl Lab, Mat Sci Div, Lemont, IL 60439 USA Univ Illinois, Dept Civil & Mat Engn, Chicago, IL 60607 USAAbiade, J. T.论文数: 0 引用数: 0 h-index: 0机构: Univ Illinois, Dept Civil & Mat Engn, Chicago, IL 60607 USA Lab Oxide Res & Educ, 842 W Taylor St, Chicago, IL 60607 USA Univ Illinois, Dept Mech & Ind Engn, Chicago, IL 60607 USA Univ Illinois, Dept Civil & Mat Engn, Chicago, IL 60607 USA
- [42] Ferroelectric polarization retention with scaling of Hf0.5Zr0.5O2 on siliconAPPLIED PHYSICS LETTERS, 2021, 118 (10)Mohan, Jaidah论文数: 0 引用数: 0 h-index: 0机构: Univ Texas Dallas, Dept Mat Sci & Engn, 800 West Campbell Rd, Richardson, TX 75080 USA Univ Texas Dallas, Dept Mat Sci & Engn, 800 West Campbell Rd, Richardson, TX 75080 USAHernandez-Arriaga, Heber论文数: 0 引用数: 0 h-index: 0机构: Univ Texas Dallas, Dept Mat Sci & Engn, 800 West Campbell Rd, Richardson, TX 75080 USA Univ Texas Dallas, Dept Mat Sci & Engn, 800 West Campbell Rd, Richardson, TX 75080 USAJung, Yong Chan论文数: 0 引用数: 0 h-index: 0机构: Univ Texas Dallas, Dept Mat Sci & Engn, 800 West Campbell Rd, Richardson, TX 75080 USA Univ Texas Dallas, Dept Mat Sci & Engn, 800 West Campbell Rd, Richardson, TX 75080 USAOnaya, Takashi论文数: 0 引用数: 0 h-index: 0机构: Univ Texas Dallas, Dept Mat Sci & Engn, 800 West Campbell Rd, Richardson, TX 75080 USA Meiji Univ, Grad Sch Sci & Technol, Dept Elect Engn, Tama Ku, 1-1-1 Higashimita, Kawasaki, Kanagawa 2148571, Japan Japan Soc Promot Sci JSPS, Chiyoda Ku, 5-3-1 Kojimachi, Tokyo 1020083, Japan Univ Texas Dallas, Dept Mat Sci & Engn, 800 West Campbell Rd, Richardson, TX 75080 USANam, Chang-Yong论文数: 0 引用数: 0 h-index: 0机构: Brookhaven Natl Lab, Ctr Funct Nano Mat, Upton, NY 11973 USA Univ Texas Dallas, Dept Mat Sci & Engn, 800 West Campbell Rd, Richardson, TX 75080 USATsai, Esther H. R.论文数: 0 引用数: 0 h-index: 0机构: Brookhaven Natl Lab, Ctr Funct Nano Mat, Upton, NY 11973 USA Univ Texas Dallas, Dept Mat Sci & Engn, 800 West Campbell Rd, Richardson, TX 75080 USA论文数: 引用数: h-index:机构:Kim, Jiyoung论文数: 0 引用数: 0 h-index: 0机构: Univ Texas Dallas, Dept Mat Sci & Engn, 800 West Campbell Rd, Richardson, TX 75080 USA Univ Texas Dallas, Dept Mat Sci & Engn, 800 West Campbell Rd, Richardson, TX 75080 USA
- [43] Charge transport in thin layers of ferroelectric Hf0.5Zr0.5O2Orlov, O.M. (oorlov@mikron.ru), 1600, Maik Nauka Publishing / Springer SBM (45): : 350 - 356Orlov O.M.论文数: 0 引用数: 0 h-index: 0机构: JSC Research Institute of Molecular Electronics (NIIME), Pervyi Zapadnyi proezd 12/1, Zelenograd, Moscow oblast JSC Research Institute of Molecular Electronics (NIIME), Pervyi Zapadnyi proezd 12/1, Zelenograd, Moscow oblastIslamov D.R.论文数: 0 引用数: 0 h-index: 0机构: Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, pr. Akad. Lavrentieva 13, Novosibirsk Novosibirsk State University, ul. Pirogova 2, Novosibirsk JSC Research Institute of Molecular Electronics (NIIME), Pervyi Zapadnyi proezd 12/1, Zelenograd, Moscow oblastChernikova A.G.论文数: 0 引用数: 0 h-index: 0机构: Moskow Institute of Physics and Technology, Institutskii per. 9, Dolgoprudny, Moscow oblast JSC Research Institute of Molecular Electronics (NIIME), Pervyi Zapadnyi proezd 12/1, Zelenograd, Moscow oblastKozodaev M.G.论文数: 0 引用数: 0 h-index: 0机构: Moskow Institute of Physics and Technology, Institutskii per. 9, Dolgoprudny, Moscow oblast JSC Research Institute of Molecular Electronics (NIIME), Pervyi Zapadnyi proezd 12/1, Zelenograd, Moscow oblastMarkeev A.M.论文数: 0 引用数: 0 h-index: 0机构: Moskow Institute of Physics and Technology, Institutskii per. 9, Dolgoprudny, Moscow oblast JSC Research Institute of Molecular Electronics (NIIME), Pervyi Zapadnyi proezd 12/1, Zelenograd, Moscow oblastPerevalov T.V.论文数: 0 引用数: 0 h-index: 0机构: Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, pr. Akad. Lavrentieva 13, Novosibirsk Novosibirsk State University, ul. Pirogova 2, Novosibirsk JSC Research Institute of Molecular Electronics (NIIME), Pervyi Zapadnyi proezd 12/1, Zelenograd, Moscow oblastGritsenko V.A.论文数: 0 引用数: 0 h-index: 0机构: Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, pr. Akad. Lavrentieva 13, Novosibirsk Novosibirsk State University, ul. Pirogova 2, Novosibirsk JSC Research Institute of Molecular Electronics (NIIME), Pervyi Zapadnyi proezd 12/1, Zelenograd, Moscow oblastKrasnikov G.Y.论文数: 0 引用数: 0 h-index: 0机构: JSC Research Institute of Molecular Electronics (NIIME), Pervyi Zapadnyi proezd 12/1, Zelenograd, Moscow oblast Public JSC Research Institute of Molecular Electronics and Micron, Pervyi Zapadnyi proezd 12/1, Zelenograd, Moscow oblast JSC Research Institute of Molecular Electronics (NIIME), Pervyi Zapadnyi proezd 12/1, Zelenograd, Moscow oblast
- [44] Dual Al2O3/Hf0.5Zr0.5O2 Stack Thin Films for Improved Ferroelectricity and ReliabilityIEEE ELECTRON DEVICE LETTERS, 2022, 43 (08) : 1235 - 1238Li, Yu-Chun论文数: 0 引用数: 0 h-index: 0机构: Fudan Univ, Sch Microelect, Shanghai Inst Intelligent Elect & Syst, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China Fudan Univ, Sch Microelect, Shanghai Inst Intelligent Elect & Syst, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R ChinaLi, Xiao-Xi论文数: 0 引用数: 0 h-index: 0机构: Fudan Univ, Sch Microelect, Shanghai Inst Intelligent Elect & Syst, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China Fudan Univ, Sch Microelect, Shanghai Inst Intelligent Elect & Syst, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R ChinaWu, Mao-Kun论文数: 0 引用数: 0 h-index: 0机构: Shanghai Jiao Tong Univ, Dept Micro Nano Elect, Shanghai 200240, Peoples R China Fudan Univ, Sch Microelect, Shanghai Inst Intelligent Elect & Syst, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R ChinaCui, Bo-Yao论文数: 0 引用数: 0 h-index: 0机构: Shanghai Jiao Tong Univ, Dept Micro Nano Elect, Shanghai 200240, Peoples R China Fudan Univ, Sch Microelect, Shanghai Inst Intelligent Elect & Syst, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R ChinaWang, Xue-Pei论文数: 0 引用数: 0 h-index: 0机构: Shanghai Jiao Tong Univ, Dept Micro Nano Elect, Shanghai 200240, Peoples R China Fudan Univ, Sch Microelect, Shanghai Inst Intelligent Elect & Syst, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R ChinaHuang, Teng论文数: 0 引用数: 0 h-index: 0机构: Fudan Univ, Sch Microelect, Shanghai Inst Intelligent Elect & Syst, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China Fudan Univ, Sch Microelect, Shanghai Inst Intelligent Elect & Syst, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R ChinaGu, Ze-Yu论文数: 0 引用数: 0 h-index: 0机构: Fudan Univ, Sch Microelect, Shanghai Inst Intelligent Elect & Syst, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China Fudan Univ, Sch Microelect, Shanghai Inst Intelligent Elect & Syst, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R ChinaJi, Zhi-Gang论文数: 0 引用数: 0 h-index: 0机构: Shanghai Jiao Tong Univ, Dept Micro Nano Elect, Shanghai 200240, Peoples R China Fudan Univ, Sch Microelect, Shanghai Inst Intelligent Elect & Syst, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R ChinaYang, Ying-Guo论文数: 0 引用数: 0 h-index: 0机构: Fudan Univ, Sch Microelect, Shanghai Inst Intelligent Elect & Syst, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China Fudan Univ, Sch Microelect, Shanghai Inst Intelligent Elect & Syst, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R ChinaZhang, David Wei论文数: 0 引用数: 0 h-index: 0机构: Fudan Univ, Sch Microelect, Shanghai Inst Intelligent Elect & Syst, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China Fudan Univ, Sch Microelect, Shanghai Inst Intelligent Elect & Syst, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R ChinaLu, Hong-Liang论文数: 0 引用数: 0 h-index: 0机构: Fudan Univ, Sch Microelect, Shanghai Inst Intelligent Elect & Syst, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China Fudan Univ, Sch Microelect, Shanghai Inst Intelligent Elect & Syst, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China
- [45] Effect of Forming Gas Furnace Annealing on the Ferroelectricity and Wake-Up Effect of Hf0.5Zr0.5O2 Thin FilmsECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2020, 9 (02)Shekhawat, Aniruddh论文数: 0 引用数: 0 h-index: 0机构: Univ Florida, Dept Mech & Aerosp Engn, Gainesville, FL 32611 USA Univ Florida, Dept Mech & Aerosp Engn, Gainesville, FL 32611 USAWalters, Glen论文数: 0 引用数: 0 h-index: 0机构: Univ Florida, Dept Elect & Comp Engn, Gainesville, FL 32611 USA Univ Florida, Dept Mech & Aerosp Engn, Gainesville, FL 32611 USA论文数: 引用数: h-index:机构:论文数: 引用数: h-index:机构:Liu, Yang论文数: 0 引用数: 0 h-index: 0机构: North Carolina State Univ, Dept Mat Sci & Engn, Raleigh, NC 27695 USA Univ Florida, Dept Mech & Aerosp Engn, Gainesville, FL 32611 USAJones, Jacob论文数: 0 引用数: 0 h-index: 0机构: North Carolina State Univ, Dept Mat Sci & Engn, Raleigh, NC 27695 USA Univ Florida, Dept Mech & Aerosp Engn, Gainesville, FL 32611 USANishida, Toshikazu论文数: 0 引用数: 0 h-index: 0机构: Univ Florida, Dept Elect & Comp Engn, Gainesville, FL 32611 USA Univ Florida, Dept Mech & Aerosp Engn, Gainesville, FL 32611 USAMoghaddam, Saeed论文数: 0 引用数: 0 h-index: 0机构: Univ Florida, Dept Mech & Aerosp Engn, Gainesville, FL 32611 USA Univ Florida, Dept Mech & Aerosp Engn, Gainesville, FL 32611 USA
- [46] Realizing ferroelectric Hf0.5Zr0.5O2 with elemental capping layersJOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2018, 36 (01):Lin, Yuh-Chen论文数: 0 引用数: 0 h-index: 0机构: Duke Univ, Dept Elect & Comp Engn, Durham, NC 27708 USA Duke Univ, Dept Elect & Comp Engn, Durham, NC 27708 USAMcGuire, Felicia论文数: 0 引用数: 0 h-index: 0机构: Duke Univ, Dept Elect & Comp Engn, Durham, NC 27708 USA Duke Univ, Dept Elect & Comp Engn, Durham, NC 27708 USAFranklin, Aaron D.论文数: 0 引用数: 0 h-index: 0机构: Duke Univ, Dept Elect & Comp Engn, Durham, NC 27708 USA Duke Univ, Dept Chem, Durham, NC 27708 USA Duke Univ, Dept Elect & Comp Engn, Durham, NC 27708 USA
- [47] Wake-up-free ferroelectric Hf0.5Zr0.5O2 thin films characterized by precession electron diffractionACTA MATERIALIA, 2023, 246Chang, Teng-Jan论文数: 0 引用数: 0 h-index: 0机构: Natl Taiwan Univ, Dept Mat Sci & Engn, Taipei, Taiwan Natl Taiwan Univ, Dept Mat Sci & Engn, Taipei, TaiwanChen, Hsing-Yang论文数: 0 引用数: 0 h-index: 0机构: Natl Taiwan Univ, Dept Mat Sci & Engn, Taipei, Taiwan Natl Taiwan Univ, Dept Mat Sci & Engn, Taipei, TaiwanWang, Chin-, I论文数: 0 引用数: 0 h-index: 0机构: Natl Taiwan Univ, Dept Mat Sci & Engn, Taipei, Taiwan Natl Taiwan Univ, Dept Mat Sci & Engn, Taipei, TaiwanLin, Hsin-Chih论文数: 0 引用数: 0 h-index: 0机构: Natl Taiwan Univ, Dept Mat Sci & Engn, Taipei, Taiwan Natl Taiwan Univ, Dept Mat Sci & Engn, Taipei, TaiwanHsu, Chen-Feng论文数: 0 引用数: 0 h-index: 0机构: Taiwan Semicond Mfg Co TSMC, Corp Res, Hsinchu, Taiwan Natl Taiwan Univ, Dept Mat Sci & Engn, Taipei, TaiwanWang, Jer-Fu论文数: 0 引用数: 0 h-index: 0机构: Taiwan Semicond Mfg Co TSMC, Corp Res, Hsinchu, Taiwan Natl Taiwan Univ, Dept Mat Sci & Engn, Taipei, TaiwanNien, Chih-Hung论文数: 0 引用数: 0 h-index: 0机构: Taiwan Semicond Mfg Co TSMC, Corp Res, Hsinchu, Taiwan Natl Taiwan Univ, Dept Mat Sci & Engn, Taipei, TaiwanChang, Chih-Sheng论文数: 0 引用数: 0 h-index: 0机构: Taiwan Semicond Mfg Co TSMC, Corp Res, Hsinchu, Taiwan Natl Taiwan Univ, Dept Mat Sci & Engn, Taipei, TaiwanRadu, Iuliana P.论文数: 0 引用数: 0 h-index: 0机构: Taiwan Semicond Mfg Co TSMC, Corp Res, Hsinchu, Taiwan Natl Taiwan Univ, Dept Mat Sci & Engn, Taipei, TaiwanChen, Miin-Jang论文数: 0 引用数: 0 h-index: 0机构: Natl Taiwan Univ, Dept Mat Sci & Engn, Taipei, Taiwan Natl Taiwan Univ, Grad Inst Elect Engn, Taipei, Taiwan Natl Taiwan Univ, Dept Mat Sci & Engn, Taipei, Taiwan
- [48] 5.1 Å EOT and low leakage TiN/Al2O3/Hf0.5Zr0.5O2/Al2O3/TiN heterostructure for DRAM capacitorAPPLIED PHYSICS LETTERS, 2023, 122 (19)Luo, Zhen论文数: 0 引用数: 0 h-index: 0机构: Univ Sci & Technol China, Hefei Natl Res Ctr Phys Sci Microscale, Dept Phys, Hefei 230026, Peoples R China Univ Sci & Technol China, CAS Key Lab Strongly Coupled Quantum Matter Phys, Hefei 230026, Peoples R China Univ Sci & Technol China, Hefei Natl Res Ctr Phys Sci Microscale, Dept Phys, Hefei 230026, Peoples R ChinaDu, Xinzhe论文数: 0 引用数: 0 h-index: 0机构: Univ Sci & Technol China, Hefei Natl Res Ctr Phys Sci Microscale, Dept Phys, Hefei 230026, Peoples R China Univ Sci & Technol China, CAS Key Lab Strongly Coupled Quantum Matter Phys, Hefei 230026, Peoples R China Univ Sci & Technol China, Hefei Natl Res Ctr Phys Sci Microscale, Dept Phys, Hefei 230026, Peoples R ChinaGan, Hui论文数: 0 引用数: 0 h-index: 0机构: Univ Sci & Technol China, Hefei Natl Res Ctr Phys Sci Microscale, Dept Phys, Hefei 230026, Peoples R China Univ Sci & Technol China, CAS Key Lab Strongly Coupled Quantum Matter Phys, Hefei 230026, Peoples R China Univ Sci & Technol China, Hefei Natl Res Ctr Phys Sci Microscale, Dept Phys, Hefei 230026, Peoples R ChinaLin, Yue论文数: 0 引用数: 0 h-index: 0机构: Univ Sci & Technol China, Hefei Natl Res Ctr Phys Sci Microscale, Dept Phys, Hefei 230026, Peoples R China Univ Sci & Technol China, CAS Key Lab Strongly Coupled Quantum Matter Phys, Hefei 230026, Peoples R China Univ Sci & Technol China, Hefei Natl Res Ctr Phys Sci Microscale, Dept Phys, Hefei 230026, Peoples R ChinaYan, Wensheng论文数: 0 引用数: 0 h-index: 0机构: Univ Sci & Technol China, Natl Synchrotron Radiat Lab, Hefei 230029, Peoples R China Univ Sci & Technol China, Hefei Natl Res Ctr Phys Sci Microscale, Dept Phys, Hefei 230026, Peoples R ChinaShen, Shengchun论文数: 0 引用数: 0 h-index: 0机构: Univ Sci & Technol China, Hefei Natl Res Ctr Phys Sci Microscale, Dept Phys, Hefei 230026, Peoples R China Univ Sci & Technol China, CAS Key Lab Strongly Coupled Quantum Matter Phys, Hefei 230026, Peoples R China Univ Sci & Technol China, Hefei Natl Res Ctr Phys Sci Microscale, Dept Phys, Hefei 230026, Peoples R ChinaYin, Yuewei论文数: 0 引用数: 0 h-index: 0机构: Univ Sci & Technol China, Hefei Natl Res Ctr Phys Sci Microscale, Dept Phys, Hefei 230026, Peoples R China Univ Sci & Technol China, CAS Key Lab Strongly Coupled Quantum Matter Phys, Hefei 230026, Peoples R China Univ Sci & Technol China, Hefei Natl Res Ctr Phys Sci Microscale, Dept Phys, Hefei 230026, Peoples R ChinaLi, Xiaoguang论文数: 0 引用数: 0 h-index: 0机构: Univ Sci & Technol China, Hefei Natl Res Ctr Phys Sci Microscale, Dept Phys, Hefei 230026, Peoples R China Nanjing Univ, Collaborat Innovat Ctr Adv Microstruct, Nanjing 210093, Peoples R China Univ Sci & Technol China, CAS Key Lab Strongly Coupled Quantum Matter Phys, Hefei 230026, Peoples R China Univ Sci & Technol China, Hefei Natl Res Ctr Phys Sci Microscale, Dept Phys, Hefei 230026, Peoples R China
- [49] Data retention and low voltage operation of Al2O3/Hf0.5Zr0.5O2based ferroelectric tunnel junctionsNANOTECHNOLOGY, 2020, 31 (39)Shekhawat, Aniruddh论文数: 0 引用数: 0 h-index: 0机构: Univ Florida, Dept Mech & Aerosp Engn, Gainesville, FL 32611 USA Univ Florida, Dept Mech & Aerosp Engn, Gainesville, FL 32611 USAWalters, Glen论文数: 0 引用数: 0 h-index: 0机构: Univ Florida, Dept Elect & Comp Engn, Gainesville, FL 32611 USA Univ Florida, Dept Mech & Aerosp Engn, Gainesville, FL 32611 USAYang, Ning论文数: 0 引用数: 0 h-index: 0机构: Univ Florida, Dept Elect & Comp Engn, Gainesville, FL 32611 USA Univ Florida, Dept Mech & Aerosp Engn, Gainesville, FL 32611 USAGuo, Jing论文数: 0 引用数: 0 h-index: 0机构: Univ Florida, Dept Elect & Comp Engn, Gainesville, FL 32611 USA Univ Florida, Dept Mech & Aerosp Engn, Gainesville, FL 32611 USANishida, Toshikazu论文数: 0 引用数: 0 h-index: 0机构: Univ Florida, Dept Elect & Comp Engn, Gainesville, FL 32611 USA Univ Florida, Dept Mech & Aerosp Engn, Gainesville, FL 32611 USAMoghaddam, Saeed论文数: 0 引用数: 0 h-index: 0机构: Univ Florida, Dept Mech & Aerosp Engn, Gainesville, FL 32611 USA Univ Florida, Dept Mech & Aerosp Engn, Gainesville, FL 32611 USA
- [50] Enhancing the ferroelectric performance of Hf0.5Zr0.5O2 films by optimizing the incorporation of Al dopantNANOTECHNOLOGY, 2025, 36 (13)Liu, Xin论文数: 0 引用数: 0 h-index: 0机构: Xi An Jiao Tong Univ, Ctr Nanomat Renewable Energy CNRE, Sch Elect Engn, State Key Lab Elect Insulat & Power Equipment, Xian 710049, Peoples R China Xi An Jiao Tong Univ, Ctr Nanomat Renewable Energy CNRE, Sch Elect Engn, State Key Lab Elect Insulat & Power Equipment, Xian 710049, Peoples R ChinaZhao, Weidong论文数: 0 引用数: 0 h-index: 0机构: Xi An Jiao Tong Univ, Ctr Nanomat Renewable Energy CNRE, Sch Elect Engn, State Key Lab Elect Insulat & Power Equipment, Xian 710049, Peoples R China Xi An Jiao Tong Univ, Ctr Nanomat Renewable Energy CNRE, Sch Elect Engn, State Key Lab Elect Insulat & Power Equipment, Xian 710049, Peoples R ChinaWang, Jiawei论文数: 0 引用数: 0 h-index: 0机构: Xi An Jiao Tong Univ, Ctr Nanomat Renewable Energy CNRE, Sch Elect Engn, State Key Lab Elect Insulat & Power Equipment, Xian 710049, Peoples R China Xi An Jiao Tong Univ, Ctr Nanomat Renewable Energy CNRE, Sch Elect Engn, State Key Lab Elect Insulat & Power Equipment, Xian 710049, Peoples R ChinaYao, Lulu论文数: 0 引用数: 0 h-index: 0机构: China Southern Power Grid Co Ltd, State Key Lab HVDC Elect Power Res Inst, Guangzhou 510663, Peoples R China Xi An Jiao Tong Univ, Ctr Nanomat Renewable Energy CNRE, Sch Elect Engn, State Key Lab Elect Insulat & Power Equipment, Xian 710049, Peoples R ChinaDing, Man论文数: 0 引用数: 0 h-index: 0机构: Hohai Univ, Nanjing 210098, Jiangsu, Peoples R China Xi An Jiao Tong Univ, Ctr Nanomat Renewable Energy CNRE, Sch Elect Engn, State Key Lab Elect Insulat & Power Equipment, Xian 710049, Peoples R ChinaCheng, Yonghong论文数: 0 引用数: 0 h-index: 0机构: Xi An Jiao Tong Univ, Ctr Nanomat Renewable Energy CNRE, Sch Elect Engn, State Key Lab Elect Insulat & Power Equipment, Xian 710049, Peoples R China Xi An Jiao Tong Univ, Ctr Nanomat Renewable Energy CNRE, Sch Elect Engn, State Key Lab Elect Insulat & Power Equipment, Xian 710049, Peoples R China