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- [21] The atomic and electronic structure of Hf0.5Zr0.5O2 and Hf0.5Zr0.5O2:La filmsJOURNAL OF SCIENCE-ADVANCED MATERIALS AND DEVICES, 2021, 6 (04): : 595 - 600Perevalov, Timofey, V论文数: 0 引用数: 0 h-index: 0机构: Rzhanov Inst Semicond Phys SB RAS, 13 Lavrentiev Ave, Novosibirsk 630090, Russia Novosibirsk State Univ, 2 Pirogov Str, Novosibirsk 630090, Russia Rzhanov Inst Semicond Phys SB RAS, 13 Lavrentiev Ave, Novosibirsk 630090, RussiaProsvirin, Igor P.论文数: 0 引用数: 0 h-index: 0机构: SB RAS, Boreskov Inst Catalysis, 5 Lavrentiev Ave, Novosibirsk 630090, Russia Rzhanov Inst Semicond Phys SB RAS, 13 Lavrentiev Ave, Novosibirsk 630090, RussiaSuprun, Evgenii A.论文数: 0 引用数: 0 h-index: 0机构: SB RAS, Boreskov Inst Catalysis, 5 Lavrentiev Ave, Novosibirsk 630090, Russia Rzhanov Inst Semicond Phys SB RAS, 13 Lavrentiev Ave, Novosibirsk 630090, RussiaMehmood, Furqan论文数: 0 引用数: 0 h-index: 0机构: Tech Univ Dresden, Chair Nanoelect, D-01062 Dresden, Germany Rzhanov Inst Semicond Phys SB RAS, 13 Lavrentiev Ave, Novosibirsk 630090, RussiaMikolajick, Thomas论文数: 0 引用数: 0 h-index: 0机构: NaMLab gGmbH, Noethnitzer Str 64 A, D-01187 Dresden, Germany Tech Univ Dresden, Chair Nanoelect, D-01062 Dresden, Germany Rzhanov Inst Semicond Phys SB RAS, 13 Lavrentiev Ave, Novosibirsk 630090, Russia论文数: 引用数: h-index:机构:Gritsenko, Vladimir A.论文数: 0 引用数: 0 h-index: 0机构: Rzhanov Inst Semicond Phys SB RAS, 13 Lavrentiev Ave, Novosibirsk 630090, Russia Novosibirsk State Univ, 2 Pirogov Str, Novosibirsk 630090, Russia Rzhanov Inst Semicond Phys SB RAS, 13 Lavrentiev Ave, Novosibirsk 630090, Russia
- [22] Enlargement of Memory Window of Si Channel FeFET by Inserting Al2O3 Interlayer on Ferroelectric Hf0.5Zr0.5O2IEEE ELECTRON DEVICE LETTERS, 2024, 45 (05) : 825 - 828Hu, Tao论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China Univ Chinese Acad Sci, Sch Integrated Circuits, Beijing 100049, Peoples R China Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R ChinaSun, Xiaoqing论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China Univ Chinese Acad Sci, Sch Integrated Circuits, Beijing 100049, Peoples R China Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R ChinaBai, Mingkai论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China Univ Chinese Acad Sci, Sch Integrated Circuits, Beijing 100049, Peoples R China Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R ChinaJia, Xinpei论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China Univ Chinese Acad Sci, Sch Integrated Circuits, Beijing 100049, Peoples R China Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R ChinaDai, Saifei论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China Univ Chinese Acad Sci, Sch Integrated Circuits, Beijing 100049, Peoples R China Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R ChinaLi, Tingting论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China Univ Chinese Acad Sci, Sch Integrated Circuits, Beijing 100049, Peoples R China Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R ChinaHan, Runhao论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China Univ Chinese Acad Sci, Sch Integrated Circuits, Beijing 100049, Peoples R China Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R ChinaDing, Yajing论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China Univ Chinese Acad Sci, Sch Integrated Circuits, Beijing 100049, Peoples R China Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R ChinaFan, Hongyang论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China Univ Chinese Acad Sci, Sch Integrated Circuits, Beijing 100049, Peoples R China Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R ChinaZhao, Yuanyuan论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China Univ Chinese Acad Sci, Sch Integrated Circuits, Beijing 100049, Peoples R China Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R ChinaChai, Junshuai论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China Univ Chinese Acad Sci, Sch Integrated Circuits, Beijing 100049, Peoples R China Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R ChinaXu, Hao论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China Univ Chinese Acad Sci, Sch Integrated Circuits, Beijing 100049, Peoples R China Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R ChinaSi, Mengwei论文数: 0 引用数: 0 h-index: 0机构: Shanghai Jiao Tong Univ, Dept Elect Engn, Shanghai 200240, Peoples R China Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R ChinaWang, Xiaolei论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China Univ Chinese Acad Sci, Sch Integrated Circuits, Beijing 100049, Peoples R China Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R ChinaWang, Wenwu论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China Univ Chinese Acad Sci, Sch Integrated Circuits, Beijing 100049, Peoples R China Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China
- [23] Persistent spin texture in ferroelectric Hf0.5Zr0.5O2APPLIED PHYSICS LETTERS, 2024, 124 (12)Li, Huinan论文数: 0 引用数: 0 h-index: 0机构: Harbin Inst Technol, Sch Phys, Harbin 150001, Peoples R China Harbin Inst Technol, Sch Phys, Harbin 150001, Peoples R ChinaChen, Xu论文数: 0 引用数: 0 h-index: 0机构: Harbin Inst Technol, Sch Phys, Harbin 150001, Peoples R China Harbin Inst Technol, Sch Phys, Harbin 150001, Peoples R ChinaZhang, Qin论文数: 0 引用数: 0 h-index: 0机构: Harbin Inst Technol, Sch Phys, Harbin 150001, Peoples R China Harbin Inst Technol, Sch Phys, Harbin 150001, Peoples R ChinaDou, Mingbo论文数: 0 引用数: 0 h-index: 0机构: Harbin Inst Technol, Sch Phys, Harbin 150001, Peoples R China Harbin Inst Technol, Sch Phys, Harbin 150001, Peoples R ChinaYu, Yue论文数: 0 引用数: 0 h-index: 0机构: Harbin Inst Technol, Sch Phys, Harbin 150001, Peoples R China Harbin Inst Technol, Sch Phys, Harbin 150001, Peoples R ChinaZhuravlev, M. Ye.论文数: 0 引用数: 0 h-index: 0机构: St Petersburg State Univ, St Petersburg 190000, Russia Harbin Inst Technol, Sch Phys, Harbin 150001, Peoples R ChinaNikolaev, A. V.论文数: 0 引用数: 0 h-index: 0机构: Moscow MV Lomonosov State Univ, Skobeltsyn Inst Nucl Phys, Moscow, Russia Harbin Inst Technol, Sch Phys, Harbin 150001, Peoples R ChinaWang, Xianjie论文数: 0 引用数: 0 h-index: 0机构: Harbin Inst Technol, Sch Phys, Harbin 150001, Peoples R China Harbin Inst Technol, Sch Phys, Harbin 150001, Peoples R ChinaTao, L. L.论文数: 0 引用数: 0 h-index: 0机构: Harbin Inst Technol, Sch Phys, Harbin 150001, Peoples R China Harbin Inst Technol, Sch Phys, Harbin 150001, Peoples R China
- [24] Ultrathin Hf0.5Zr0.5O2 Ferroelectric Films on SiACS APPLIED MATERIALS & INTERFACES, 2016, 8 (11) : 7232 - 7237Chernikova, Anna论文数: 0 引用数: 0 h-index: 0机构: Moscow Inst Phys & Technol, Dolgoprudnyi 141700, Moscow Region, Russia Moscow Inst Phys & Technol, Dolgoprudnyi 141700, Moscow Region, RussiaKozodaev, Maksim论文数: 0 引用数: 0 h-index: 0机构: Moscow Inst Phys & Technol, Dolgoprudnyi 141700, Moscow Region, Russia Moscow Inst Phys & Technol, Dolgoprudnyi 141700, Moscow Region, RussiaMarkeev, Andrei论文数: 0 引用数: 0 h-index: 0机构: Moscow Inst Phys & Technol, Dolgoprudnyi 141700, Moscow Region, Russia Moscow Inst Phys & Technol, Dolgoprudnyi 141700, Moscow Region, RussiaNegrov, Dmitrii论文数: 0 引用数: 0 h-index: 0机构: Moscow Inst Phys & Technol, Dolgoprudnyi 141700, Moscow Region, Russia Moscow Inst Phys & Technol, Dolgoprudnyi 141700, Moscow Region, RussiaSpiridonov, Maksim论文数: 0 引用数: 0 h-index: 0机构: Moscow Inst Phys & Technol, Dolgoprudnyi 141700, Moscow Region, Russia Moscow Inst Phys & Technol, Dolgoprudnyi 141700, Moscow Region, RussiaZarubin, Sergei论文数: 0 引用数: 0 h-index: 0机构: Moscow Inst Phys & Technol, Dolgoprudnyi 141700, Moscow Region, Russia Moscow Inst Phys & Technol, Dolgoprudnyi 141700, Moscow Region, RussiaBak, Ohheum论文数: 0 引用数: 0 h-index: 0机构: Univ Nebraska, Dept Phys & Astron, Lincoln, NE 68588 USA Moscow Inst Phys & Technol, Dolgoprudnyi 141700, Moscow Region, RussiaBuraohain, Pratyush论文数: 0 引用数: 0 h-index: 0机构: Univ Nebraska, Dept Phys & Astron, Lincoln, NE 68588 USA Moscow Inst Phys & Technol, Dolgoprudnyi 141700, Moscow Region, RussiaLu, Haidong论文数: 0 引用数: 0 h-index: 0机构: Univ Nebraska, Dept Phys & Astron, Lincoln, NE 68588 USA Moscow Inst Phys & Technol, Dolgoprudnyi 141700, Moscow Region, RussiaSuvorova, Elena论文数: 0 引用数: 0 h-index: 0机构: Moscow Inst Phys & Technol, Dolgoprudnyi 141700, Moscow Region, Russia Ecole Polytech Fed Lausanne, CH-1015 Lausanne, Switzerland AV Shubnikov Crystallog Inst, Leninsky Pr 59, Moscow 119333, Russia Moscow Inst Phys & Technol, Dolgoprudnyi 141700, Moscow Region, RussiaGruverman, Alexei论文数: 0 引用数: 0 h-index: 0机构: Univ Nebraska, Dept Phys & Astron, Lincoln, NE 68588 USA Moscow Inst Phys & Technol, Dolgoprudnyi 141700, Moscow Region, RussiaZenkevich, Andrei论文数: 0 引用数: 0 h-index: 0机构: Moscow Inst Phys & Technol, Dolgoprudnyi 141700, Moscow Region, Russia NRNU Moscow Engn Phys Inst, Moscow 115409, Russia Moscow Inst Phys & Technol, Dolgoprudnyi 141700, Moscow Region, Russia
- [25] Ferroelectric Electroresistance after a Breakdown in Epitaxial Hf0.5Zr0.5O2 Tunnel JunctionsACS APPLIED ELECTRONIC MATERIALS, 2023, 5 (02) : 740 - 747Long, Xiao论文数: 0 引用数: 0 h-index: 0机构: Inst Ciencia Mat Barcelona ICMAB CSIC, Bellaterra 08193, Catalonia, Spain Inst Ciencia Mat Barcelona ICMAB CSIC, Bellaterra 08193, Catalonia, SpainTan, Huan论文数: 0 引用数: 0 h-index: 0机构: Inst Ciencia Mat Barcelona ICMAB CSIC, Bellaterra 08193, Catalonia, Spain Inst Ciencia Mat Barcelona ICMAB CSIC, Bellaterra 08193, Catalonia, SpainSanchez, Florencio论文数: 0 引用数: 0 h-index: 0机构: Inst Ciencia Mat Barcelona ICMAB CSIC, Bellaterra 08193, Catalonia, Spain Inst Ciencia Mat Barcelona ICMAB CSIC, Bellaterra 08193, Catalonia, SpainFina, Ignasi论文数: 0 引用数: 0 h-index: 0机构: Inst Ciencia Mat Barcelona ICMAB CSIC, Bellaterra 08193, Catalonia, Spain Inst Ciencia Mat Barcelona ICMAB CSIC, Bellaterra 08193, Catalonia, SpainFontcuberta, Josep论文数: 0 引用数: 0 h-index: 0机构: Inst Ciencia Mat Barcelona ICMAB CSIC, Bellaterra 08193, Catalonia, Spain Inst Ciencia Mat Barcelona ICMAB CSIC, Bellaterra 08193, Catalonia, Spain
- [26] Field-Induced Ferroelectric Phase Evolution During Polarization "Wake-Up" in Hf0.5Zr0.5O2 Thin Film CapacitorsADVANCED ELECTRONIC MATERIALS, 2023, 9 (06):论文数: 引用数: h-index:机构:Huang, Fei论文数: 0 引用数: 0 h-index: 0机构: Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USAChoi, Yoon-Young论文数: 0 引用数: 0 h-index: 0机构: Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA Samsung Elect, DRAM TD Semicond R&D Ctr, Hwaseong 18448, Gyeonggi Do, South Korea Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USAYu, Zhouchangwan论文数: 0 引用数: 0 h-index: 0机构: Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USAThampy, Vivek论文数: 0 引用数: 0 h-index: 0机构: SLAC Natl Accelerator Lab, Menlo Pk, CA 94025 USA Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USABaniecki, John D.论文数: 0 引用数: 0 h-index: 0机构: SLAC Natl Accelerator Lab, Menlo Pk, CA 94025 USA Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USATsai, Wilman论文数: 0 引用数: 0 h-index: 0机构: Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USAMcIntyre, Paul C.论文数: 0 引用数: 0 h-index: 0机构: Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA SLAC Natl Accelerator Lab, Menlo Pk, CA 94025 USA Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA
- [27] Ferroelectric Hf0.5Zr0.5O2 films on SrTiO3(111)JOURNAL OF MATERIALS CHEMISTRY C, 2022, 10 (21) : 8407 - 8413Song, Tingfeng论文数: 0 引用数: 0 h-index: 0机构: CSIC, Inst Ciencia Mat Barcelona ICMAB, Campus UAB, Barcelona 08193, Spain CSIC, Inst Ciencia Mat Barcelona ICMAB, Campus UAB, Barcelona 08193, SpainEstandia, Saul论文数: 0 引用数: 0 h-index: 0机构: CSIC, Inst Ciencia Mat Barcelona ICMAB, Campus UAB, Barcelona 08193, Spain CSIC, Inst Ciencia Mat Barcelona ICMAB, Campus UAB, Barcelona 08193, SpainDix, Nico论文数: 0 引用数: 0 h-index: 0机构: CSIC, Inst Ciencia Mat Barcelona ICMAB, Campus UAB, Barcelona 08193, Spain CSIC, Inst Ciencia Mat Barcelona ICMAB, Campus UAB, Barcelona 08193, SpainGazquez, Jaume论文数: 0 引用数: 0 h-index: 0机构: CSIC, Inst Ciencia Mat Barcelona ICMAB, Campus UAB, Barcelona 08193, Spain CSIC, Inst Ciencia Mat Barcelona ICMAB, Campus UAB, Barcelona 08193, SpainGich, Marti论文数: 0 引用数: 0 h-index: 0机构: CSIC, Inst Ciencia Mat Barcelona ICMAB, Campus UAB, Barcelona 08193, Spain CSIC, Inst Ciencia Mat Barcelona ICMAB, Campus UAB, Barcelona 08193, SpainFina, Ignasi论文数: 0 引用数: 0 h-index: 0机构: CSIC, Inst Ciencia Mat Barcelona ICMAB, Campus UAB, Barcelona 08193, Spain CSIC, Inst Ciencia Mat Barcelona ICMAB, Campus UAB, Barcelona 08193, SpainSanchez, Florencio论文数: 0 引用数: 0 h-index: 0机构: CSIC, Inst Ciencia Mat Barcelona ICMAB, Campus UAB, Barcelona 08193, Spain CSIC, Inst Ciencia Mat Barcelona ICMAB, Campus UAB, Barcelona 08193, Spain
- [28] Understanding phase evolution of ferroelectric Hf0.5Zr0.5O2 thin films with Al2O3 and Y2O3 inserted layersJOURNAL OF MATERIALS CHEMISTRY C, 2024, 12 (14) : 5035 - 5046Shin, Jonghoon论文数: 0 引用数: 0 h-index: 0机构: Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 08826, South Korea Seoul Natl Univ, Interuniv Semicond Res Ctr, Seoul 08826, South Korea Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 08826, South KoreaSeo, Haengha论文数: 0 引用数: 0 h-index: 0机构: Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 08826, South Korea Seoul Natl Univ, Interuniv Semicond Res Ctr, Seoul 08826, South Korea Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 08826, South KoreaYe, Kun Hee论文数: 0 引用数: 0 h-index: 0机构: Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 08826, South Korea Seoul Natl Univ, Interuniv Semicond Res Ctr, Seoul 08826, South Korea Korea Inst Sci & Technol, Ctr Elect Mat, Seoul 02792, South Korea Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 08826, South KoreaJang, Yoon Ho论文数: 0 引用数: 0 h-index: 0机构: Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 08826, South Korea Seoul Natl Univ, Interuniv Semicond Res Ctr, Seoul 08826, South Korea Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 08826, South KoreaKwon, Dae Seon论文数: 0 引用数: 0 h-index: 0机构: Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 08826, South Korea Seoul Natl Univ, Interuniv Semicond Res Ctr, Seoul 08826, South Korea Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 08826, South KoreaLim, Junil论文数: 0 引用数: 0 h-index: 0机构: Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 08826, South Korea Seoul Natl Univ, Interuniv Semicond Res Ctr, Seoul 08826, South Korea Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 08826, South KoreaKim, Tae Kyun论文数: 0 引用数: 0 h-index: 0机构: Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 08826, South Korea Seoul Natl Univ, Interuniv Semicond Res Ctr, Seoul 08826, South Korea Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 08826, South KoreaPaik, Heewon论文数: 0 引用数: 0 h-index: 0机构: Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 08826, South Korea Seoul Natl Univ, Interuniv Semicond Res Ctr, Seoul 08826, South Korea Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 08826, South KoreaSong, Haewon论文数: 0 引用数: 0 h-index: 0机构: Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 08826, South Korea Seoul Natl Univ, Interuniv Semicond Res Ctr, Seoul 08826, South Korea Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 08826, South KoreaKim, Ha Ni论文数: 0 引用数: 0 h-index: 0机构: Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 08826, South Korea Seoul Natl Univ, Interuniv Semicond Res Ctr, Seoul 08826, South Korea Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 08826, South KoreaByun, Seungyong论文数: 0 引用数: 0 h-index: 0机构: Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 08826, South Korea Seoul Natl Univ, Interuniv Semicond Res Ctr, Seoul 08826, South Korea Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 08826, South KoreaShin, Seong Jae论文数: 0 引用数: 0 h-index: 0机构: Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 08826, South Korea Seoul Natl Univ, Interuniv Semicond Res Ctr, Seoul 08826, South Korea Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 08826, South KoreaKim, Kyung Do论文数: 0 引用数: 0 h-index: 0机构: Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 08826, South Korea Seoul Natl Univ, Interuniv Semicond Res Ctr, Seoul 08826, South Korea Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 08826, South KoreaLee, Yong Bin论文数: 0 引用数: 0 h-index: 0机构: Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 08826, South Korea Seoul Natl Univ, Interuniv Semicond Res Ctr, Seoul 08826, South Korea Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 08826, South KoreaLee, In Soo论文数: 0 引用数: 0 h-index: 0机构: Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 08826, South Korea Seoul Natl Univ, Interuniv Semicond Res Ctr, Seoul 08826, South Korea Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 08826, South KoreaChoi, Jung-Hae论文数: 0 引用数: 0 h-index: 0机构: Korea Inst Sci & Technol, Ctr Elect Mat, Seoul 02792, South Korea Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 08826, South KoreaHwang, Cheol Seong论文数: 0 引用数: 0 h-index: 0机构: Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 08826, South Korea Seoul Natl Univ, Interuniv Semicond Res Ctr, Seoul 08826, South Korea Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 08826, South Korea
- [29] Excellent ferroelectric Hf0.5Zr0.5O2 thin films with ultra-thin Al2O3 serving as capping layerAPPLIED PHYSICS LETTERS, 2021, 119 (17)Liu, Bingwen论文数: 0 引用数: 0 h-index: 0机构: Hebei Univ, Coll Phys Sci & Technol, Baoding 071002, Peoples R China Hebei Univ, Coll Phys Sci & Technol, Baoding 071002, Peoples R ChinaCao, Yating论文数: 0 引用数: 0 h-index: 0机构: Hebei Univ, Coll Phys Sci & Technol, Baoding 071002, Peoples R China Hebei Univ, Coll Phys Sci & Technol, Baoding 071002, Peoples R ChinaZhang, Wei论文数: 0 引用数: 0 h-index: 0机构: Hebei Univ, Coll Phys Sci & Technol, Baoding 071002, Peoples R China Hebei Univ, Coll Phys Sci & Technol, Baoding 071002, Peoples R ChinaLi, Yubao论文数: 0 引用数: 0 h-index: 0机构: Hebei Univ, Coll Phys Sci & Technol, Baoding 071002, Peoples R China Hebei Univ, Coll Phys Sci & Technol, Baoding 071002, Peoples R China
- [30] Time-Dependent Imprint in Hf0.5Zr0.5O2 Ferroelectric Thin FilmsADVANCED ELECTRONIC MATERIALS, 2021, 7 (08)Takada, Kenshi论文数: 0 引用数: 0 h-index: 0机构: Osaka Prefecture Univ, Grad Sch Engn, Dept Phys & Elect, Sakai, Osaka 5998531, Japan Osaka Prefecture Univ, Grad Sch Engn, Dept Phys & Elect, Sakai, Osaka 5998531, JapanTakarae, Shuya论文数: 0 引用数: 0 h-index: 0机构: Osaka Prefecture Univ, Grad Sch Engn, Dept Phys & Elect, Sakai, Osaka 5998531, Japan Osaka Prefecture Univ, Grad Sch Engn, Dept Phys & Elect, Sakai, Osaka 5998531, JapanShimamoto, Kento论文数: 0 引用数: 0 h-index: 0机构: Osaka Prefecture Univ, Grad Sch Engn, Dept Phys & Elect, Sakai, Osaka 5998531, Japan Osaka Prefecture Univ, Grad Sch Engn, Dept Phys & Elect, Sakai, Osaka 5998531, JapanFujimura, Norifumi论文数: 0 引用数: 0 h-index: 0机构: Osaka Prefecture Univ, Grad Sch Engn, Dept Phys & Elect, Sakai, Osaka 5998531, Japan Osaka Prefecture Univ, Grad Sch Engn, Dept Phys & Elect, Sakai, Osaka 5998531, JapanYoshimura, Takeshi论文数: 0 引用数: 0 h-index: 0机构: Osaka Prefecture Univ, Grad Sch Engn, Dept Phys & Elect, Sakai, Osaka 5998531, Japan Osaka Prefecture Univ, Grad Sch Engn, Dept Phys & Elect, Sakai, Osaka 5998531, Japan