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- [32] Simulation and measurement of total ionizing dose radiation induced image lag increase in pinned photodiode CMOS image sensors NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2017, 856 : 32 - 35
- [33] Total Ionizing Dose effects in 130-nm commercial CMOS technologies for HEP experiments NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2007, 582 (03): : 750 - 754
- [35] Investigation of Scaling and Temperature Effects in Total Ionizing Dose (TID) Experiments in 65 nm CMOS PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE MIXED DESIGN OF INTEGRATED CIRCUITS AND SYSTEM (MIXDES 2018), 2018, : 313 - 318
- [36] Analysis of Total Ionizing Dose effects for highly scaled CMOS devices in Low Earth Orbit NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2018, 428 : 30 - 37
- [37] A physics-based numerical modeling of total ionizing dose effects in CMOS integrated circuits 2023 ARGENTINE CONFERENCE ON ELECTRONICS, CAE, 2023, : 41 - 45
- [38] Total Ionizing Dose (TID) Effects on Finger Transistors in a 65nm CMOS Process 2016 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS), 2016, : 5 - 8
- [39] Study of total ionizing dose radiation effects on enclosed gate transistors in a commercial CMOS technology CHINESE PHYSICS, 2007, 16 (12): : 3760 - 3765