Looking into the future of Nanoelectronics in the Diversification Efficient Era

被引：0
|
作者：
Simon DELEONIBUS [1 ]
机构：
[1] Universit′es Grenoble Alpes, CEA, LETI,MINATEC Campus
来源：
Science China(Information Sciences) | 2016年 / 59卷 / 06期
关键词：
CMOS; thin films; heterogeneous integration; NEMS; 3D integration; sequential; parallel; zero intrinsic variability; zero power systems;
D O I：
暂无
中图分类号：
TN432 [场效应型];
学科分类号：
080903 ; 1401 ;
摘要：
The linear scaling of CMOS has encountered, since its beginning, many hurdles which request new process modules, driven mainly by the maximization of energy efficiency. Fabrication at the sub 10 nm node level will request Intrinsic Variability approaching to zero. The rapid growth of mobile, multifunctional and autonomous systems is hardly demanding to reach Zero Power consumption. The solutions to integrate Thin Film based devices, architectures and systems in order to face these challenges are described.
引用
收藏
页码：6 / 19
页数：14
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