Recent Advances in ZnO Films Prepared by Pulsed Laser Deposition

被引：0
|
作者：
HE Jian-ting
机构：
来源：
Semiconductor Photonics and Technology | 2005年 / 04期
关键词：
PLD; ZnO; Substrate temperature; Oxygen pressure;
D O I：
暂无
中图分类号：
TN304.2 [化合物半导体];
学科分类号：
0805 ; 080501 ; 080502 ; 080903 ;
摘要：
Pulsed laser deposition(PLD) is emerging as the most rapid and efficient technique for fabricating the many compound films. ZnO thin films can be prepared under various deposition conditions by PLD. The effects of various substrate temperature, oxygen partial pressure, annealing temperature, substrate, buffer layers thickness and film thickness on micro-structural, optical and electrical properties of ZnO films grown by PLD technology are reviewed. ZnO films with special function can grow under proper conditions by PLD.
引用
收藏
页码：25 / 29+44
页数：6
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