High breakdown voltage InGaAs/InP double heterojunction bipolar transistors with f;=256 GHz and BV;= 8.3 V

被引：1
|
作者：
程伟 [1 ]
赵岩 [1 ]
高汉超 [1 ]
陈辰 [1 ]
杨乃彬 [1 ]
机构：
[1] Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute,Nanjing 210016,China
来源：
半导体学报 | 2012年 / 33卷 / 01期
关键词：
InP; double heterojunction bipolar transistor; planarization;
D O I：
暂无
中图分类号：
TN322.8 [];
学科分类号：
摘要：
An InGaAs/InP DHBT with an InGaAsP composite collector is designed and fabricated using triple mesa structural and planarization technology.All processes are on 3-inch wafers.The DHBT with an emitter area of 1 x 15μm;exhibits a current cutoff frequency f;= 170 GHz and a maximum oscillation frequency f;= 256 GHz.The breakdown voltage is 8.3 V,which is to our knowledge the highest BV;ever reported for InGaAs/InP DHBTs in China with comparable high frequency performances.The high speed InGaAs/InP DHBTs with high breakdown voltage are promising for voltage-controlled oscillator and mixer applications at W band or even higher frequencies.
引用
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页码：56 / 58
页数：3
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