Ge Complementary Tunneling Field-Effect Transistors Featuring Dopant Segregated NiGe Source/Drain

被引：0

作者：

李骏康 ^{[1
]}

曲益明 ^{[1
]}

曾思雨 ^{[1
]}

程然 ^{[1
]}

张睿 ^{[1
]}

赵毅 ^{[1
]}

机构：

[1] College of Information Science & Electronic Engineering, Zhejiang University

来源：

Chinese Physics Letters | 2018年 / 11期

基金：

中国国家自然科学基金; 中央高校基本科研业务费专项资金资助;

关键词：

Ge Complementary Tunneling Field-Effect Transistors Featuring Dopant Segregated NiGe Source/Drain; MOSFET;

D O I：

暂无

中图分类号：

TN386 [场效应器件];

学科分类号：

0805 ; 080501 ; 080502 ; 080903 ;

摘要：

Ge complementary tunneling field-effect transistors（TFETs） are fabricated with the NiGe metal source/drain（S/D） structure. The dopant segregation method is employed to form the NiGe/Ge tunneling junctions of sufficiently high Schottky barrier heights. As a result, the Ge p-and n-TFETs exhibit decent electrical properties of large ON-state current and steep sub-threshold slope（S factor）. Especially, I;of 0.2 μA/μm is revealed at V;-V;= V;= ±0.5 V for Ge pTFETs,with the S factor of 28 mV/dec at 7 K.

引用

页码：80 / 83

页数：4

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