Analysis of Source-to-Drain Capacitance Components in Tunneling Field-Effect Transistors

被引：1

作者：

Lee, Sang Hyuk ^{[1
]}

Kang, In Man ^{[1
]}

机构：

[1] Kyungpook Natl Univ, Sch Elect Engn, Taegu 702701, South Korea

来源：

JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS | 2017年 / 12卷 / 11期

基金：

新加坡国家研究基金会;

关键词：

Tunneling Field-Effect Transistor; Source-to-Drain Capacitance; Radio-Frequency; Small-Signal Modeling;

D O I：

10.1166/jno.2017.2104

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this study, small-signal modeling of source-to-drain capacitance (C-sd) in tunneling field-effect transistors (TFETs) was performed for radio-frequency (RF) applications through technology computer-aided design (TCAD) simulation. C-sd is a critical parameter because it affects output impedance matching in RF circuit design. Although the C-sd of a conventional metal-oxide-semiconductor field-effect transistor (MOSFET) is expressed by the channel charge modulation based on the relationship -dQ(s)/dv(d), that of a TFET is affected by the distance between the source and the inversion layer edge. Accurate modeling for the admittance at the output port of a TFET was made feasible by inserting an additional capacitive component (C-tunnel) into the RF circuit model. The accuracy of the proposed model was verified by Y-22 parameters up to 100 GHz.

引用

页码：1280 / 1283

页数：4

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