Monolithic integration of an AlGaN/GaN metal-insulator field-effect transistor with an ultra-low voltage-drop diode for self-protection

被引：0

作者：

汪志刚 ^{[1
]}

陈万军 ^{[1
]}

张竞 ^{[1
]}

张波 ^{[1
]}

李肇基 ^{[1
]}

机构：

[1] State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China

来源：

Chinese Physics B | 2012年 / 21卷 / 08期

基金：

中央高校基本科研业务费专项资金资助; 中国国家自然科学基金;

关键词：

AlGaN/GaN; AlGaN/GaN heterostructures; metal-insulator field-effect transistor; fieldcontrolled diode;

D O I：

暂无

中图分类号：

TN386 [场效应器件];

学科分类号：

0805 ; 080501 ; 080502 ; 080903 ;

摘要：

In this paper,we present a monolithic integration of a self-protected AlGaN/GaN metal-insulator field-effect transistor(MISFET).An integrated field-controlled diode on the drain side of the AlGaN/GaN MISFET features a selfprotected function for a reverse bias.This diode takes advantage of the recessed-barrier enhancement-mode technique to realize an ultra-low voltage drop and a low turn-ON voltage.In the smart monolithic integration,this integrated diode can block a reverse bias(> 70 V/μm) and suppress the leakage current(< 5 × 10-11 A/mm).Compared with conventional monolithic integration,the numerical results show that the MISFET integrated with a field-controlled diode leads to a good performance for smart power integration.And the power loss is lower than 50% in conduction without forward current degeneration.

引用

页码：463 / 468

页数：6

共 27 条

[1] Monolithic integration of an AlGaN/GaN metal-insulator field-effect transistor with an ultra-low voltage-drop diode for self-protection
Wang Zhi-Gang
Chen Wan-Jun
Zhang Jing
Zhang Bo
Li Zhao-Ji
CHINESE PHYSICS B, 2012, 21 (08)
[2] Electrical characteristics of AlGaN/GaN metal-insulator semiconductor heterostructure field-effect transistors on sapphire substrates
W. S. Tan
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Journal of Electronic Materials, 2003, 32 : 350 - 354
[3] Electrical characteristics of AlGaN/GaN metal-insulator semiconductor heterostructure field-effect transistors on sapphire substrates
Tan, WS
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Parbook, PJ
JOURNAL OF ELECTRONIC MATERIALS, 2003, 32 (05) : 350 - 354
[4] AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistor with oxidized Ni as a gate insulator
Oh, CS
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Yang, GM
Lim, KY
Yang, JW
APPLIED PHYSICS LETTERS, 2004, 85 (18) : 4214 - 4216
[5] GaN Metal-Oxide-Semiconductor Field-Effect Transistor with Tetraethylorthosilicate SiO2 Gate Insulator on AlGaN/GaN Heterostructure
Ao, Jin-Ping
Nakatani, Katsutoshi
Ohmuro, Keisuke
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JAPANESE JOURNAL OF APPLIED PHYSICS, 2010, 49 (04)
[6] AlGaN/GaN metal-insulator-semiconductor heterostructure field-effect transistor with an in-situ AlN cap layer
Lee, K. H.
Chang, P. C.
Chang, S. J.
APPLIED PHYSICS LETTERS, 2011, 99 (15)
[7] MONOLITHIC INTEGRATION OF A VERY LOW THRESHOLD GAINASP LASER AND METAL-INSULATOR-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR ON SEMI-INSULATING INP
KOREN, U
YU, KL
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APPLIED PHYSICS LETTERS, 1982, 40 (08) : 643 - 645
[8] Low-frequency noise in AlTiO/AlGaN/GaN metal-insulator-semiconductor heterojunction field-effect transistors
Son Phuong Le
Ui, Toshimasa
Tuan Quy Nguyen
Shih, Hong-An
Suzuki, Toshi-kazu
JOURNAL OF APPLIED PHYSICS, 2016, 119 (20)
[9] 2-DIMENSIONAL METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR FOR ULTRA-LOW POWER CIRCUIT APPLICATIONS
PEATMAN, WCB
PARK, H
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IEEE ELECTRON DEVICE LETTERS, 1994, 15 (07) : 245 - 247
[10] Application of Sputtering-Deposited AlN Films to Gate Dielectric for AlGaN/GaN Metal-Insulator-Semiconductor Heterojunction Field-Effect Transistor
Shih, Hong-An
Kudo, Masahiro
Akabori, Masashi
Suzuki, Toshi-kazu
JAPANESE JOURNAL OF APPLIED PHYSICS, 2012, 51 (02)

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