Monolithic integration of an AlGaN/GaN metal-insulator field-effect transistor with an ultra-low voltage-drop diode for self-protection

被引：0

作者：

汪志刚 ^{[1
]}

陈万军 ^{[1
]}

张竞 ^{[1
]}

张波 ^{[1
]}

李肇基 ^{[1
]}

机构：

[1] State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China

来源：

Chinese Physics B | 2012年 / 21卷 / 08期

基金：

中央高校基本科研业务费专项资金资助; 中国国家自然科学基金;

关键词：

AlGaN/GaN; AlGaN/GaN heterostructures; metal-insulator field-effect transistor; fieldcontrolled diode;

D O I：

暂无

中图分类号：

TN386 [场效应器件];

学科分类号：

0805 ; 080501 ; 080502 ; 080903 ;

摘要：

In this paper,we present a monolithic integration of a self-protected AlGaN/GaN metal-insulator field-effect transistor(MISFET).An integrated field-controlled diode on the drain side of the AlGaN/GaN MISFET features a selfprotected function for a reverse bias.This diode takes advantage of the recessed-barrier enhancement-mode technique to realize an ultra-low voltage drop and a low turn-ON voltage.In the smart monolithic integration,this integrated diode can block a reverse bias(> 70 V/μm) and suppress the leakage current(< 5 × 10-11 A/mm).Compared with conventional monolithic integration,the numerical results show that the MISFET integrated with a field-controlled diode leads to a good performance for smart power integration.And the power loss is lower than 50% in conduction without forward current degeneration.

引用

页码：463 / 468

页数：6

共 27 条

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[24] Variable body effect factor fully depleted silicon-on-insulator metal oxide semiconductor field effect transistor for ultra low-power variable-threshold-voltage complementary metal oxide semiconductor applications
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[25] High Integrity SiO2 Gate Insulator Formed by Microwave-Excited Plasma Enhanced Chemical Vapor Deposition for AlGaN/GaN Hybrid Metal-Oxide-Semiconductor Heterojunction Field-Effect Transistor on Si Substrate
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[26] Refractory WNx/W self-aligned gate GaAs power metal-semiconductor field-effect transistor for 1.9-GHz digital mobile communication system operating with a single low-voltage supply
Nagaoka, Masami, 1600, Publ by JJAP, Minato-ku, Japan (33):
[27] REFRACTORY WNX/W SELF-ALIGNED GATE GAAS POWER METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR FOR 1.9-GHZ DIGITAL MOBILE COMMUNICATION-SYSTEM OPERATING WITH A SINGLE LOW-VOLTAGE SUPPLY
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