Study of ion implanted Al0.25Ga0.75As/GaAs by Raman spectroscopy

被引：0
|
作者：
刘丕均
夏曰源
刘向东
卢贵武
机构：
来源：
Science China Mathematics | 2001年 / 12期
基金：
中国国家自然科学基金;
关键词：
ion implantation; doping; Raman spectroscopy; RBS/C measurement; lattice strain;
D O I：
暂无
中图分类号：
O657.3 [光化学分析法（光谱分析法）];
学科分类号：
070302 ; 081704 ;
摘要：
This paper reported the effect of the weak damage in the AI0.25 Ga0.75 As/GaAs epitaxial layer induced by 0.8 MeV Si ions implantation with ion dose from 1 × 1014 to 5 × 1015 cm -2. The Raman spectra measured on these samples showed that there were two kinds of phonon modes existing in the epitaxial AI0.25Ga0.75As films. The strains induced in the implanted layer and the corresponding lattice parameters were also evaluated as a function of the implanted dose. In addition, the Rutherford backscattering spectrometry/channeling (RBS/C) was also measured on these samples. These two measurement techniques all confirmed that the implantation only induced weak damage in the material.
引用
收藏
页码：1621 / 1626
页数：6
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