Annealing studies of Si-implanted Al0.25Ga0.75N

Electrical and optical activation studies of Si-implanted Al 0.25Ga0.75N grown on sapphire substrate have been made as a function of ion dose and anneal temperature. Silicon implantation was done at room temperature with doses of 1 × 1014 and 1 × 10 15 cm-2 at 200 keV. The samples were proximity cap annealed from 1200 to 1350 °C with a 500-Å-thick AlN cap in a nitrogen environment. The electrical activation efficiencies of 65 and 87% were obtained for the Al0.25Ga0.75N sample implanted with doses of 1 × 1014 and 1 × 1015 cm-2, respectively and annealed at 1350 °C for 2 min. The activation efficiency and mobility increase with anneal temperature, indicating an improved implantation damage recovery. The highest mobility obtained from the Si-implanted Al0.25Ga0.75N was 50 cm2/Vs for a dose of 1 × 1015 cm-2. The increase of photoluminescence intensities of band-edge luminescence and a broad green band was observed as the anneal temperature increases from 1200 to 1350 °C, indicating an excellent implantation damage recovery with increasing anneal temperature. © 2003 WILEY-VCH Verlag GmbH & Co. KGaA.