Giant in-plane optical anisotropy of a-plane ZnO on r-plane sapphire

被引：0

作者：

武树杰 ^{[1
]}

陈涌海 ^{[1
]}

秦旭东 ^{[1
]}

高寒松 ^{[1
]}

俞金玲 ^{[1
]}

朱来攀 ^{[1
]}

李远 ^{[1
]}

时凯 ^{[1
]}

机构：

[1] Key Laboratory of Semiconductor Materials Science and Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices,Institute of Semiconductors,Chinese Academy of Sciences

来源：

Journal of Semiconductors | 2013年 / 12期

基金：

中国国家自然科学基金; 国家高技术研究发展计划(863计划);

关键词：

ZnO; in-plane optical anisotropy; reflectance difference spectroscopy;

D O I：

暂无

中图分类号：

TN304 [材料];

学科分类号：

0805 ; 080501 ; 080502 ; 080903 ;

摘要：

We have measured the in-plane optical anisotropy(IPOA) of(1120) ZnO(a-plane) on(1012) sapphire(r-plane) by reflectance difference spectroscopy(RDS) at room temperature.Giant IPOA has been observed between the light polarized direction parallel and perpendicular to the c axis of ZnO,since the symmetry of a-plane is C2v.A sharp resonance has been observed near the fundamental band gap,which is induced by the polarizationdepend band gap shift.The sharp line shape is attributed to the exciton transition.The spectra fitting and differential spectra indicate the polarization-depend band energies.The giant IPOA is possible enhanced by anisotropy strain along and perpendicular to the c axis in the a-plane.

引用

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页码：21 / 24

页数：4

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