Characterization of positive bias temperature instability of NMOSFET with high-k/metal gate last process

被引：0

作者：

任尚清 ^{[1
]}

杨红 ^{[1
]}

唐波 ^{[1
]}

徐昊 ^{[1
]}

罗维春 ^{[1
]}

唐兆云 ^{[1
]}

徐烨锋 ^{[1
]}

许静 ^{[1
]}

王大海 ^{[1
]}

李俊峰 ^{[1
]}

闫江 ^{[1
]}

赵超 ^{[1
]}

陈大鹏 ^{[1
]}

叶甜春 ^{[1
]}

王文武 ^{[1
]}

机构：

[1] Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics,Chinese Academy of Sciences

来源：

JournalofSemiconductors | 2015年 / 36卷 / 01期

基金：

中国国家自然科学基金;

关键词：

positive bias temperature instability(PBTI); high-k; metal gate;

D O I：

暂无

中图分类号：

TN386 [场效应器件];

学科分类号：

摘要：

Positive bias temperature instability(PBTI) characteristics and degradation mechanisms of NMOSFET with high-k/metal gate last process have been systematically investigated. The time evolution of threshold voltage shift during PBTI stress still follows a power law. However, the exponent n decreases from 0.26 to 0.16 linearly as the gate stress voltage increases from 0.6 to 1.2 V. There is no interface state generation during stress because of the negligible sub-threshold swing change. Moreover, the activation energy is 0.1 e V, which implies that electrons directly tunnel into high-k bulk and are trapped by pre-existing traps resulting into PBTI degradation. During recovery the threshold voltage shift is linear in lgt, and a mathematical model is proposed to express threshold voltage shift.

引用

页码：90 / 93

页数：4

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